Enhanced hydrophobic bond strength can be achieved by exposing prime grade silicon wafers to ultraviolet (UV) light and heat prior to bonding. The following independent variables were explored: platen temperature, UV exposure time, oxygen-containing vs non-oxygen-containing (nitrogen only) bonding atmosphere, and annealing temperature. The results suggest exposure to UV can be used as an activation process which removes the passivation of the silicon surface rendering the silicon highly reactive. Exposure of silicon wafers to UV appears to be a promising low-temperature surface activation method. (c) 2006 The Electrochemical Society.