Single crystal 3C-SiC epitaxial layers have been grown on SOI substrates using low-pressure chemical vapor deposition (LPCVD). The SOI substrates consist of nominally 100 A Si layers bonded to 100 mm poly 3C-SiC substrates using direct wafer bonding and SOI film transfer techniques. Miscut Si(100) films were incorporated into the wafer bonding process for the first time in an effort to further reduce anti-phase domain formation in the 3C-SiC films. The Si films were transferred from Si(100) wafers miscut 4degrees toward the [211] direction. The 3C-SiC layers were grown using a two-step process. First the Si was carbonized using propane mixed in a hydrogen carrier gas to convert the surface to SiC at atmospheric pressure. Next SiC growth was conducted by the addition of silane into the gas mix and a reduction of the process pressure to 150 Torr. SEM and XRD analysis were performed on films grown for 30 and 60 min at 1380degreesC (and an additional hour at 1550degreesC) indicate that the film is single crystal and oriented in the [001] direction of the starting Si bonded film.