Abrupt junction tunnel diodes have been fabricated using hydrophobic direct wafer bonding to join together highly n- and p-type doped wafers. Low reverse resistance backward diodes were achieved. The reverse bias behavior of the diodes is purely ohmic with a total reverse resistance of 0.0015 Omega cm(2), which produces a reverse voltage of 150 mV at 100 A/cm(2). Although Esaki tunneling is observed under forward bias, there is no observed negative differential resistance due to high excess current. The current work is the first step in creating low-loss stacked diode structures for high blocking voltage electric power applications. (C) 2004 The Electrochemical Society.