화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.25, No.3, 922-925, 2007
Focused ion beam tomography of a microelectronic device with sub-2-nm resolution
A method for implementing focused ion beam tomography with two dimensional images separated by less than 2 nm per slice has been developed. The calculated resolution of the voxel dataset is estimated to be less than 1 x 1 x 2 nm(3) similar to 2 nm(3). A programed antifuse structure in a field programable gate array antifuse structure was analyzed using this method of imaging, showing the individual nanoscale components of the antifuse structure and the fusing region. (c) 2007 American Vacuum Society.