Molecular beam epitaxy (MBE) has been employed almost entirely for the growth of arsenic compounds due to the lack. of a suitable suitable solid phosphorous source. Advanced phosphide epitaxy has only been performed by metal organic chemical vapor deposition and phosphide based gas-source MBE. Solid source MBE (SSMBE), however, is capable of growing GaInAsP and AlGaInP layer structures without using toxic gases as source material. The key of SSMBE in producing high quality phosphides is a valved cracker cell for elemental phosphorus and arsenic, as well as the optimization of growth conditions such as growth temperature, P cracking zone temperature, P/As ratio, Delta T between inner and outer heaters, and doping profiles. The 830 nm material was grown in GEN III reactor on 2 in. GaAs wafers doped with Si. Substrate growth temperature by a pyrometer was 500 degrees C, the cracker temperature was kept at 850 degrees C, and Delta T at 12 degrees C. To verify the material quality, wafers were processed to make lasers with different cavity lengths and 56 jim emitter widths. Internal quantum efficiency (eta(i)) of 95.5% and internal optical losses (alpha(i)) of 0.47 cm-1 at 25 degrees C were obtained. Devices were burn in for more than 5000 h at cw mode, indicating high reliability. (c) 2007 American Vacuum Society.