We have grown InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength up to 2.2 mum in solid-source molecular-beam epitaxy. A continuous-wale threshold current density of 370 A/cm(2) at room temperature has been achieved for 2.2 mum lasers. Continuous-wave operation at temperature as high as 100 degreesC has been demonstrated and a characteristic temperature of 72 K has been achieved for 1.79 mum lasers.