Lasers with emission wavelength of 1.8-2.1 mum offer many important applications to laser spectroscopy, eye-safe medical care and trace chemical detection. Strained InGaAs/InGaAsP structures on InP substrates have been reported as an alternative approach for the development of semiconductor laser diodes in the spectral range 1.8-2.1 mum due to the superior InP substrate quality and mature processing technology. In this paper. we report the fabrication and performances of InGaAs/InGaAsP/InP strained quantum well lasers grown by gas source molecular beam epitaxy. The diodes show good I-V characteristics, and the typical turn-on voltage at room temperature is around 0.4-0.5 V. A threshold current of about 120 mA is achieved for a chip with 500 mum cavity length and 4.5 mum stripe width. The maximum output power with 10% duty cycle is 18 mW. The main peak of the laser. spectrum is located at 1.84 mum.