Strain compensated 1.3 mum InasP/InGaAsP laser structures have been grown by using gas sourer MBE and the ridge waveguide laser diodes have been fabricated. The temperature characteristics of those laser chips have been investigated in detail. The ridge type laser chips show threshold current about 10 mA at room temperature, with slope efficiency greater than 0.35 W/A/un-coated facet. The characteristic temperature of the threshold current were greater than 90 K from 72 degreesC to 90 degreesC. The spectral and far field characteristics of those laser chips also have been investigated.