Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films have been prepared on Pt/Ti/SiO₂/Si substrate by a chemical solution deposition method. Bismuth acetate, lanthanum acetate, and titanium isopropoxide were used as the precursors of bismuth, lanthanum, and titanium, respectively. The BLT thin films were annealed at various annealing temperatures using either furnace or rapid thermal annealing (RTA). The crystal structure and the surface morphology of the thin films were observed by x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM), respectively, and the electrical property was measured using a RT 66A. In the case of BLT film annealed by furnace at 650 ℃ for 1 h, the residual polarization (P_r) and coercive voltage (V_c) were 10.5 μC/cm² and 1.4 V, respectively. BLT film annealed by RTA at 700 ℃ for 3 min showed similar P_r value of 11 μC/cm² but higher V_c of 1.7 V than that annealed by the furnace. Therefore, the furnace annealing and RTA for the crystallization of BLT films gave similar physical and electrical properties. When low crystallization temperature was required, however, the furnace annealing method was better than RTA.