Low-resistivity SnO2 doped In2O3 (ITO) transparent conductive films were successfully deposited on SiO2-coated plastic substrates using d.c. arc-discharge ion plating. A resistivity of 2.45 X 10(-4) Omega cm. was achieved at a substrate temperature of 100 degreesC. The films had a polycrystalline structure with a [111] preferred orientation and the strongest peak was at (222). The average grain size of the films was approximately 500 nm. The visible transparency of the films was approximately 80%, and no deformation of the substrate was observed.