In2O3 doped with 5 wt.% SnO2 [indium-tin oxide (ITO) (5 wt.%)] films were deposited on glass substrates by pulsed laser deposition using an ArF laser (lambda = 193 nm). In all experiments, repetition rates of 1 similar to 50 Hz, an energy density of 6 J/cm(2), and an ablation time of 30-900 s were used. A lowest resistivity of 8.45 X 10(-5) Omega cm and an optical transmittance of more than 80% in the visible range of the spectrum were obtained for ITO (5 wt.%) films of approximately 300-nm-thickness fabricated at a substrate temperature of 400 degreesC and oxygen pressure of 10 Pa. Smooth surfaces with an average surface roughness of 1.26 nm were observed by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM).