Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.7 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (28 articles)

875 - 877	Epitaxial growth of high quality cubic MgZnO films on MgO substrate Wang LK, Ju ZG, Shan CX, Zheng J, Li BH, Zhang ZZ, Yao B, Zhao DX, Shen DZ, Zhang JY
878 - 885	Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters Reimann C, Trempa M, Jung T, Friedrich J, Muller G
886 - 891	A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers Yarlagadda B, Rodriguez A, Li P, Velampati R, Ocampo JF, Ayers JE, Jain FC
892 - 896	Growth of ZnTe and CdTe films using the isothermal close space sublimation technique in vacuum environment Larramendi S, Zawislak FC, Behar M, Pedrero E, Velez MH, de Melo O
897 - 901	Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed Takahashi I, Usami N, Kutsukake K, Stokkan G, Morishita K, Nakajima K
902 - 905	Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth Lai KY, Paskova T, Wheeler VD, Grenko JA, Johnson MAL, Udwary K, Preble EA, Evans KR
906 - 909	Room temperature ferromagnetism and ferroelectricity behavior of (Cu, Li) co-doped ZnO films deposited by reactive magnetron sputtering Zou CW, Wang HJ, Yin ML, Li M, Liu CS, Guo LP, Fu DJ, Kang TW
910 - 913	Growth of PbSe on ZnTe/GaAs(211)B by molecular beam epitaxy Wang XJ, Hou YB, Chang Y, Becker CR, Klie RF, Kodama R, Aqariden F, Sivananthan S
914 - 917	Effect of target-substrate separation on HgCdTe films formed by pulsed laser deposition Liu M, Man BY, Lin XC, Li XY
918 - 925	Selective epitaxial growth of Ge(110) in trenches using the aspect ratio trapping technique Destefanis V, Hartmann JM, Baud L, Delaye V, Billon T
926 - 932	On the existence of submicron diameter current shunts in morphologically perfect device layers Wasilewski ZR, Dupont E, Weyher JL, Laframboise S, Buchanan M, Liu HC
933 - 938	Mass flux of ZnSe-N-H-Cl chemical vapor transport (CVT) system Liu CY, Hu T, Jie WQ
939 - 946	Usual and unusual crystallization from solution Revalor E, Hammadi Z, Astier JP, Grossier R, Garcia E, Hoff C, Furuta K, Okustu T, Morin R, Veesler S
947 - 952	Controlled growth of zinc oxide crystals with tunable shape Huang AS, Caro J
953 - 960	Growth of the calcium carbonate polymorph vaterite in mixtures of water and ethylene glycol at conditions of gas processing Flaten EM, Seiersten M, Andreassen JP
961 - 966	Seeded calcite sonocrystallization Boels L, Wagterveld RM, Mayer MJ, Witkamp GJ
967 - 970	Pentacene growth on graphite investigated by low-energy electron microscope Liu HW, Al-Mahboob A, Fujikawa Y, Fukui N, Hitosugi T, Hashizume T, Xue QK, Sakurai T
971 - 977	High-pressure vertical Bridgman growth of lead magnesium niobate-lead titanate single crystal Dhar R, Tjossem R, Lynn KG
978 - 981	Effects of the oxygen pressure on the structural and optical properties of ZnBeMgO films prepared by pulsed laser deposition Yang C, Li XM, Gao XD, Cao X, Yang R, Li YZ
982 - 988	A comparative study on migration of a planar interface during solidification of non-dilute alloys Li S, Zhang J, Wu P
989 - 996	Three-dimensional calculations of facets during Czochralski crystal growth Weinstein O, Miller W
997 - 1004	Global analysis of heat transfer in CZ crystal growth of oxide taking into account three-dimensional unsteady melt convection: Investigation of the coupling method between 2D and 3D models Tsukada T, Sugioka KI, Jing CJ, Kobayashi M
1005 - 1018	Nonlinear model-based control of the Czochralski process I: Motivation, modeling and feedback controller design Winkler J, Neubert M, Rudolph J
1019 - 1028	Nonlinear model-based control of the Czochralski process II: Reconstruction of crystal radius and growth rate from the weighing signal Winkler J, Neubert M, Rudolph J
1029 - 1035	A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source Lu W, Campion RP, Foxon CT, Larkins EC
1036 - 1039	Semimagnetic II-VI semiconductor resonant tunneling diodes characterized by high-resolution X-ray diffraction Frey A, Ruth M, Dengel RG, Schumacher C, Gould C, Schmidt G, Brunner K, Molenkamp LW
1040 - 1045	Growth, optical, thermal, piezo and ferroelectric studies on ethylenediamine ditartrate dihydrate (EDADTDH) single crystals Subhashini V, Ponnusamy S, Muthamizhchelvan C
1046 - 1054	Transition from nucleation to ripening in the classical nucleation model Uwaha M, Koyama K