We demonstrate the growth of single crystal PbSe on GaAs(2 1 1)B using ZnTe as a buffer layer by molecular beam epitaxy. X-ray diffraction shows that the orientation of PbSe grown on ZnTe/GaAs(2 1 1)B is (5 1 1). Surface reconstruction was observed by means of reflection high energy electron diffraction patterns. Nomarski microscopic images show that the PbSe surface is smooth and not cracked even though the thermo-expansion coefficient of PbSe is almost 240% of that of ZnTe and 340% of that of GaAs. Interface structure of PbSe/ZnTe as well as the crystalline quality of the epitaxial layers was investigated by transmission electron microscope. Stick and ball models have been proposed to explain the epitaxial relationship of PbSe and ZnTe. (C) 2010 Elsevier B.V. All rights reserved.