203 - 208 |
Investigation of solid reaction between Fe and Si0.8Ge0.2 Chueh YL, Cheng SL, Chou LJ |
209 - 219 |
Effect of a Cu-Se secondary phase on the epitaxial growth of CuInSe2 on (100)GaAs Yoon S, Kim S, Craciun V, Kim WK, Kaczynski R, Acher R, Anderson TJ, Crisalle OD, Li SS |
220 - 226 |
Optimization of 1.3 mu m metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy Tangring I, Wang SM, Sadeghi M, Gu QF, Larsson A |
227 - 233 |
In situ monitoring of growth rate and composition of AlGaInP and InGaAsP by reflection measurements in MOVPE Watatani C, Hanamaki Y, Takemi M, Ono K, Mihashi Y, Nishimura T |
234 - 241 |
Fabrication and photoluminescence of highly crystalline GaN and GaN : Mg nanoparticles Ogi T, Itoh Y, Abdullah M, Iskandar F, Azuma Y, Okuyama K |
242 - 248 |
Single crystal growth of GaN using a Ga melt in Na vapor Yamada T, Yamane H, Iwata H, Sarayama S |
249 - 254 |
Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy Pavelescu EM, Hakkarainen T, Dhaka VDS, Tkachenko NV, Jouhti T, Lemmetyinen H, Pessa M |
255 - 262 |
GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures Huang ZC, Wu HZ, Lao YF, Cao M, Liu C |
263 - 274 |
Dislocation-free large area InP ELO layers by liquid phase epitaxy Kochiya T, Oyama Y, Kimura T, Suto K, Nishizawa J |
275 - 280 |
Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation Di ZF, Huang AP, Chu PK, Zhang M, Liu WL, Song ZT, Luo SH, Lin CL |
281 - 289 |
Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition Chrastina D, Isella G, Bollani M, Rossner B, Muller E, Hackbarth T, Wintersberger E, Zhong Z, Stangl J, von Kanel H |
290 - 296 |
InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition Sears K, Wong-Leung J, Tan HH, Jagadish C |
297 - 302 |
Infrared spectroscopy of polycrystalline ZnO and ZnO : N thin films Keyes BM, Gedvilas LM, Li X, Coutts TJ |
303 - 309 |
Growth of bismuth tellurite crystals by vertical Bridgman method Chen HB, Li RS, Ge CX, Ge X, Xu W |
310 - 317 |
Study on the thermal stability of InN by in-situ laser reflectance system Huang Y, Wang H, Sun Q, Chen J, Wang JF, Wang YT, Yang H |
318 - 322 |
A study of the correlation between nickel and the ultraviolet emission in SiOx films He Y, Feng JY, Wu QL |
323 - 327 |
InGaAsP/GaInP/AlGaInP 0.8 mu m QW lasers grown by MOCVD using TBP and TBAs Dong JR, Teng JH, Chua SJ, Wang YJ, Foo BC, Yin R |
328 - 333 |
Field emission properties of self-assembled InN nano- structures: Effect of Ga incorporation Shih CF, Chen NC, Chang PH, Liu KS |
334 - 343 |
Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy Liu X, Tang Q, Harris JS, Kamins TI |
344 - 348 |
Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon Hao HY, Liao XB, Zeng XB, Diao HW, Xu Y, Kong GL |
349 - 354 |
Nanostructure formation and emission characterization of blue emission InN/GaN quantum well with thin InN well layers Cho HK, Kim DC, Kong BH, Lee KH, Oh JT, Kim S, Kim DJ, Kim JW, Hong SK |
355 - 363 |
Growth of cubic GaN crystals from hexagonal GaN feedstock Purdy A |
364 - 369 |
Flux growth and characterization of lead-free piezoelectric single crystal [Bi-0.5(Na1-xKx)(0.5)]TiO3 Yi XJ, Chen HC, Cao WW, Zhao ML, Yang DM, Ma GP, Yang CH, Han JR |
370 - 376 |
Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition Fujiwara H, Danno K, Kimoto T, Tojo T, Matsunami H |
377 - 383 |
Characterization of Ge(Se-1-S-x(x))(2) series layered crystals grown by vertical Bridgman method Wu CC, Ho CH, Wu JY, Lin SL, Huang YS |
384 - 390 |
Thermal evaporation growth and the luminescence property of TiO2 nanowires Wu JM, Shih HC, Wu WT, Tseng YK, Chen IC |
391 - 406 |
Time-dependent, three-dimensional flow and mass transport during solution growth of potassium titanyl phosphate Vartak B, Yeckel A, Derby JJ |
407 - 410 |
Growth, structure and morphology study of monoclinic RbGd(WO4)(2) crystals Wang KP, Zhang JX, Wang JY, Yu WT, Zhang HJ, Wang XP, Wang ZP, Ba MF |
411 - 415 |
Comparison of cerium-doped Lu2Si2O7 and Lu2SiO5 scintillators Yan CF, Zhao GJ, Hang Y, Zhang LH, Xu J |
416 - 425 |
Growth and properties of pure and rare earth-doped Ca-3 (BO3)(2) single crystal Lu X, You ZY, Li JF, Zhu ZJ, Jia GH, Wang Y, Wu BC, Tu CY |
426 - 431 |
Nd : GdVO4 thin films grown on La3Ga5SiO14 (LGS) and sapphire substrates by pulsed laser deposition properties Li HX, Wang JY, Zhang HJ, Yu GW, Wang XX, Fang L, Shen MR, Ning ZY, Yang J, Li SL, Wang XL, Wang KM |
432 - 439 |
Electrical properties of sol-gel derived pyrochlore-type bismuth magnesium niobate Bi-2(Mg1/3Nb2/3)(2)O-7 thin films Kim SS, Kim WJ |
440 - 445 |
Early stage growth behavior of laser-deposited heteroepitaxial ZnO films on Al2O3 (0001) Park JY, Chang CH, Kim SS |
446 - 451 |
Early stage growth behavior of ZnO nanoneedle arrays on Al2O3(0001) by metalorganic chemical vapor deposition Park JY, Lee JM, Je JH, Kim SS |
452 - 457 |
Crystalline phases, microstructures and electrical properties of hafnium oxide films deposited by sol-gel method Wang ZJ, Kumagai T, Kokawa H, Tsuaur J, Ichiki M, Maeda R |
458 - 462 |
Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source Chen FG, Ye ZZ, Xu WZ, Zhao BH, Zhu LP, Lv JG |
463 - 467 |
Synthesis and electrochemical properties of nanocrystalline V2O5 flake via a citric acid-assistant sol-gel method Gao LS, Wang X, Fei LF, Ji MR, Zheng HG, Zhang HC, Shen T, Yang K |
468 - 474 |
Sol-gel synthesis and characterization of Na0.5K0.5NbO3 thin films Soderlind F, Kall PO, Helmersson U |
475 - 480 |
Post-annealing of Al-doped ZnO films in hydrogen atmosphere Oh BY, Jeong MC, Kim DS, Lee W, Myoung JM |
481 - 491 |
Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasite Uda S, Huang XM, Koh S |
492 - 500 |
Sub-micron ferroelectric domain engineering in liquid phase epitaxy LiNbO3 by direct-write e-beam techniques Son J, Yuen Y, Orlov SS, Hesselink L |
501 - 507 |
Diluted magnetic semiconductor of p-type InMnP : Zn epilayer Shon Y, Jeon HC, Park YS, Lee SJ, Kim DY, Kim HS, Kang TW, Park YJ, Yoon CS, Kim CK, Kim EK, Kim Y, Woo YD |
508 - 512 |
Growth and Q-switching performance on mixed laser crystal Nd-0.0055(Gd0.64Y0.36)(0.9945)VO4 Qin LJ, Ng SP, Tang DY, Jia YG, Xu HZ, Meng XL, Han BQ |
513 - 517 |
ZnO MSM photodetectors with Ru contact electrodes Lin TK, Chang SJ, Su YK, Huang BR, Fujita M, Horikoshi Y |
518 - 524 |
Growth and characteristics of LYSO (Lu2(1-x-y)Y2xSiO5 : Ce-y) scintillation crystals Qin LS, Li HY, Lu S, Ding DZ, Ren GH |
525 - 529 |
Ultrasonic-induced synthesis of CeO2 nanotubes Miao JJ, Wang H, Li YR, Zhu JM, Zhu JJ |
530 - 537 |
Fabrication of gadolinium biphthalocyanine nano/microwires by electrophoretic deposition Chen HZ, Cao L, Zhou HB, Rong Y, Wang M |
538 - 542 |
Mo-containing diamond-like carbon films with blue emission Qiu T, Wu XL, Fu RKY, Fan JY, Yang LW, Chu PK, Siu GG |
543 - 548 |
Growth and some electrical properties of Pb(Co1/3Nb2/3) O-3-PbTiO3 crystals prepared by a Bridgman method Xu GS, Duan ZQ, Wang XF, Yang DF, Chen K |
549 - 555 |
Crystal growth of Sc-doped near-stoichiometric LiNbO3 and its characteristics Nakamura M, Takekawa S, Liu YW, Kitamura K |
556 - 562 |
Growth of SiC-C nanocables on SiO2 films derived by gaseous composition control using Ti Lee KH, Seo WS, Lee Y, Lee MH, Song SJ, Sigmund W |
563 - 570 |
Electrical conduction studies on Bi2Te3 thin films Sathyamoorthy R, Dheepa J, Subbarayan A |
571 - 576 |
Properties of polycrystalline ZnO thin films by metal organic chemical vapor deposition Tan ST, Chen BJ, Sun XW, Hu X, Zhang XH, Chua SJ |
577 - 586 |
Composition-temperature-partial pressures data for Cd0.8Zn0.2Te by optical absorption measurements Su CH |
587 - 591 |
High temperature crystallization of NdAl3(BO3)(4) and YAl3(BO3)(4) doped with Sc3+ and Ga3+ Leonyuk NI, Koporulina EV, Maltsev VV, Mokhov AV, Pilipenko OV |
592 - 595 |
Using cryoloops for X-ray data collection from protein crystals at room temperature: A simple applicable method Li SJ, Suzuki M, Nakagawa A |
596 - 603 |
Optical frequency doubling in microtube Czochralski (mu T-CZ) grown benzophenone single crystals Arivanandhan M, Sankaranarayanan K, Sanjeeviraja C, Arulchakkaravarthi A, Ramasamy P |
604 - 610 |
Hydrothermal synthesis, morphological evolution and characterization of Na2CoP2O7 crystals Gopalakrishna GS, Mahesh MJ, Ashamanjari KG, Shashidharaprasad J |
611 - 615 |
Growth of one-dimensional Sb2S3 and Sb2Se3 crystals with straw-tied-like architectures Wang DB, Song CX, Fu X, Li X |
616 - 622 |
Polymorphous crystals from chlorozincate-choline chloride ionic liquids in different molar ratios Liu YD, Wu GZ, Qi MY |
623 - 638 |
Extended investigation of porosity in quasicrystals by synchrotron X-ray phase contrast radiography - I: In icosahedral AlPdMn grains Agliozzo S, Brunello E, Klein H, Mancini L, Hartwig J, Baruchel J, Gastaldi J |
639 - 645 |
Direct nitridation of molten Al(Mg,Si) alloy to AlN Haibo J, Chen K, Heping Z, Agathopoulos S, Fabrichnaya O, Ferreira JMF |
646 - 653 |
Orientation of nanocrystals in rapidly solidified Al-based alloys and its correlation to the compound-forming tendency of alloys Zhang ZH, Wang Y, Bian XF, Wang WM |
654 - 668 |
Directional solidification of Al-1.5 wt% Ni alloys under diffusion transport in space and fluid-flow localisation on earth Thi HN, Dabo Y, Drevet B, Dupouy MD, Camel D, Billia B, Hunt JD, Chilton A |
669 - 677 |
Synthesis of monodispersed barium titanate nanocrytals - hydrothermal recrystallization of BaTiO3 nanospheres Yan T, Liu XL, Wang NR, Chen JF |
678 - 682 |
Fabrication and abnormal magnetic properties of MnO nanoparticles via vapor phase growth Chang YQ, Yu DP, Wang Z, Long Y, Zhang HZ, Ye RC |