Experimental investigation into the properties of the semiconductor, Fe(Si1-zGez), has revealed that it is the only phase presented after annealing at 650-950 degrees C. The Ge concentrations in Fe(Si1-zGez) increase at annealing temperatures of 650-750 degrees C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 degrees C because the Ge atoms were gradually expelled from Fe(Si1-zGez) to form the agglomerated Ge-rich Si1-yGey. Compared to the conventional Fe/Si reaction, the transformation of beta-Fe(Si1-zGez)(2) was actually blocked by the presence of Ge in Fe(Si1-zGez). (c) 2005 Published by Elsevier B.V.