New data on flux growth of mixed crystals of R(A1,M)(3)(BO3)(4), R = Y, Nd, M = Sc, Ga have been obtained. Single crystals were prepared by spontaneous nucleation under different conditions using a K2Mo3O10 based flux. The initial concentration of Sc and Ga doped RAl3(BO3)(4) crystalline substance in fluxed melts was varied from 17 to 30 wt%. The average K distribution coefficients were found to be 0.98-0.31 for gallium, but no scandium was found in these materials. Splitting of trigonal prism faces is a specific morphological feature of the crystals grown. (c) 2005 Elsevier B.V. All rights reserved.