Journal of Crystal Growth

Journal of Crystal Growth, Vol.224, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (24 articles)

1 - 4	Room temperature growth of rod-like nanocrystalline Ag2Te in mixed solvent Jiang Y, Wu Y, Yang ZP, Xie Y, Qian YT
5 - 10	Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates Wang T, Bai J, Sakai S
11 - 20	Slip in GaAs substrates during molecular beam epitaxial growth: an X-ray topographic survey Mock P
21 - 31	A chemical assessment of the suitability of allyl-iso-propyltelluride as a Te precursor for metal organic vapour phase epitaxy Hails JE, Cole-Hamilton DJ, Stevenson J, Bell W, Foster DF, Ellis D
32 - 40	Photoluminescence studies of ZnSe starting materials and vapor grown bulk crystals Su CH, Feth S, Wang LJ, Lehoczky SL
41 - 46	Optical properties of InGaAs quantum dots formed on InAlAs wetting layer Zhang YC, Huang CJ, Xu B, Ye XL, Ding D, Wang JZ, Li YF, Liu F, Wang ZG
47 - 51	Surface corrugation of In0.15Ga0.85As layers grown on (553)B-oriented GaAs substrates by molecular beam epitaxy Yan FW, Zhang WJ, Zhang RG, Cui LQ, Liang CG, Liu SY
52 - 58	Dynamics of native point defects in H-2 and Ar plasma-etched narrow gap (HgCd)Te Belas E, Grill R, Franc J, Moravec P, Varghova R, Hoschl P, Sitter H, Toth AL
59 - 66	Effect of gadolinium (Gd3+) addition on the monophased field and crystal growth of Ba2NaNb5O15 (BNN) Lebbou K, Itagaki H, Yoshikawa A, Fukuda T, Boulon G, Brenier A
67 - 73	Flux growth and optical spectra of NdTa7O19 crystals Cavalli E, Leonyuk LI, Leonyuk NI
74 - 82	Characterization of Cu doped CdSe thin films grown by vacuum evaporation Ramaiah KS, Su YK, Chang SJ, Juang FS, Ohdaira K, Shiraki Y, Liu HP, Chen IG, Bhatnagar AK
83 - 88	Self-assembled growth of cubic silicon carbide nano-islands on silicon Yang JS, Wang X, Zhai GJ, Cue N, Wang X
89 - 94	Crystal growth of Trans-stilbene by vertical Bridgman technique with modified growth vessels and its characterisation Arulchakkaravarthi A, Santhanaraghavan P, Ramasamy P
95 - 100	Crystal growth of CuInSe2 single crystals by synthesis solute diffusion method with controlling the growth rate Matsushita H, Ai S, Katsui A
101 - 110	Kinetics and modeling of sublimation growth of silicon carbide bulk crystal Chen QS, Zhang H, Prasad V, Balkas CM, Yushin NK, Wang S
111 - 116	Characterization of N-doped diamond films by transmission electron microscopy Jiang N, Shinjo S, Inaoka T, Shintani Y, Ito T, Makita H, Hatta A, Hiraki A
117 - 121	In situ catalytic growth of Al2O3 and Si nanowires Tang CC, Fan SS, Li P, de la Chapelle ML, Dang HY
122 - 127	Growth and characterization of non-linear optical L-hystidine tetrafluoroborate (L-HFB) single crystals Rajendran KV, Jayaraman D, Jayavel R, Kumar RM, Ramasamy P
128 - 133	Solution-mediated transformation of photographic coupler Li N, Shanks RA, Murphy DM
134 - 144	Effect of crystal geometry on disappearance of slow-growing faces Prywer J
145 - 154	Effect of flow due to density change on eutectic growth Coriell SR, McFadden GB, Mitchell WF, Murray BT, Andrews JB, Arikawa Y
155 - 164	Stable shape of crystal growth face in crystallization from solution under microgravity Zhu ZH, Ge PW, Huo CR, Chen D, Li CR
165 - 174	The importance of predicting rate-limited growth for accurate modeling of commercial MOCVD reactors Mazumder S, Lowry SA
175 - 186	Sharp interface limits of a thermodynamically consistent solutal phase field model Kessler D