1 - 4 |
Domain structure in strontium tetraborate single crystal Zaitsev AI, Aleksandrovsky AS, Vasiliev AD, Zamkov A |
5 - 7 |
Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method Yoshida T, Oshima Y, Eri T, Ikeda K, Yamamoto S, Watanabe K, Shibata M, Mishima T |
8 - 12 |
Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations Netzel C, Wernicke T, Zeimer U, Brunner F, Weyers M, Kneissl M |
13 - 21 |
GaN :delta-Mg grown by MOVPE: Structural properties and their effect on the electronic and optical behavior Li T, Simbrunner C, Wegscheider M, Navarro-Quezada A, Quast M, Schmidegg K, Bonanni A |
22 - 25 |
Plasma-assisted molecular-beam epitaxy of GaN on transition-metal carbide(111) surfaces Aizawa T, Hishita S, Otani S |
26 - 30 |
Growth and structural properties of Zn1-xCrxTe crystals Krishnaiah G, Rao NM, Reddy DR, Reddy BK, Reddy PS |
31 - 35 |
Influence of amorphous buffer layers on the crystallinity of sputter-depo sited undoped ZnO films Matsuda T, Furuta M, Hiramatsu T, Li CY, Furuta H, Hokari H, Hirao T |
36 - 39 |
Rapid Z-plate seed regeneration of large size KDP crystal from solution Li GH |
40 - 46 |
Low temperature molecular beam epitaxy growth of cubic GaCrN Kimura S, Emura S, Yamauchi Y, Zhou YK, Hasegawa S, Asahi H |
47 - 50 |
Growth of PBI2 single crystals from stoichiometric and Pb excess melts Hayashi T, Kinpara M, Wang JF, Mimura K, Isshiki M |
51 - 56 |
Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces Losego MD, Mita S, Collazo R, Sitar Z, Maria JP |
57 - 61 |
ZnO microtube ultraviolet detectors Cheng JP, Zhang YJ, Guo RY |
62 - 70 |
Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering Hartmann JM, Gonzatti F, Fillot F, Billon T |
71 - 77 |
Microstructure and field emission properties of the Si-TaS2 eutectic in situ composites by electron beam floating zone melting technique Cui CJ, Zhang J, Jia ZW, Su HJ, Liu L, Fu HZ |
78 - 82 |
Growth and characterization of GaSb/AlGaSb multi-quantum well structures on Si(001) substrates Toyota H, Sasaki T, Jinbo Y, Uchitomi N |
83 - 90 |
Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process Hong YH, Sim BC, Shim KB |
91 - 95 |
Electrical properties of semi-insulating CdTe0 : 9Se0 : 1 : Cl crystal and its surface preparation Kim K, Hong J, Kim S |
96 - 100 |
Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (111)Si substrates Komiyama J, Eriguchi K, Abe Y, Suzuki S, Nakanishi H, Yamane T, Murakami H, Koukitu A |
101 - 109 |
Epitaxial growth of sexithiophene on TiO2(110) Haber T, Ivanco J, Ramsey MG, Resel R |
110 - 115 |
Crystallization mechanisms of acicular crystals Puel F, Verdurand E, Taulelle P, Bebon C, Colson D, Klein JP, Veesler S |
116 - 123 |
Growth and characterization of L-prolinium picrate single crystal: A promising NLO crystal Devi TU, Lawrence N, Babu RR, Ramamurthi K |
124 - 130 |
Growth and characterization of diaquatetrakis (thiocyanato) cobalt(II) mercury(II) N-methyl-2-pyrolidone (CMTWMP) single crystals Potheher IV, Madhavana J, Rajarajan K, Nagaraja KS, Sagayaraj P |
131 - 139 |
The role of fluid flow and convective steering during the assembly of colloidal crystals Gasperino D, Meng LL, Norris DJ, Derby JJ |
140 - 144 |
Growth of Yb3+-doped KY3F10 concentration gradient crystal fiber by laser-heated pedestal growth (LHPG) technique Ito M, Hraiech S, Goutaudier C, Lebbou K, Boulon G |
145 - 151 |
Crystal growth of high-quality ZrB2 single crystals using the floating-zone method Hori K, Inoue S, Isogami M |
152 - 155 |
Phase diagram analysis and crystal growth of solid solutions Ca1-xSrxF2 Klimm D, Rabe M, Bertram R, Uecker R, Parthier L |
156 - 159 |
Growth and spectral properties of Er : Gd2SiO5 crystal Xu XD, Zhao GJ, Wu F, Xu WW, Zong YH, Wang XD, Zhao ZW, Zhou GQ, Xu J |
160 - 164 |
Synthesis and spectral properties of starch capped CdS nanoparticles in aqueous solution Rodriguez P, Munoz-Aguirre N, Martinez ESM, de la Cruz GG, Tomas SA, Angel OZ |
165 - 170 |
Epitaxial ZnS/Si core-shell nanowires and single-crystal silicon tube field-effect transistors Chen ZH, Tang H, Fan X, Je JS, Lee CS, Lee ST |
171 - 173 |
Flux growth of beta-Mn2V2O7 single crystals He ZZ, Ueda Y |
174 - 186 |
Numerical simulation of thermoconvective flows and more uniform depositions in a cold wall rectangular APCVD reactor Nicolas X, Benzaoui A, Xin SH |
187 - 203 |
Geometric modeling of homoepitaxial CVD diamond growth: I. The {100}{111}{110}{113} system Silva F, Bonnin X, Achard J, Brinza O, Michau A, Gicquel A |
204 - 213 |
Global analysis of heat transfer in CZ crystal growth of oxide taking into account three-dimensional unsteady melt convection: Effect of meniscus shape Jing CJ, Ihara S, Sugioka KI, Tsukada T, Kobayashi M |
214 - 220 |
Effects of the Li-evaporation on the czochralski growth of gamma-LiAlO2 Velickov B, Mogilatenko A, Bertram R, Klimma D, Uecker R, Neumann W, Fornari R |
221 - 228 |
Birefringence simulation of annealed ingot of calcium fluoride single crystal Ogina H, Miyazaki N, Mabuchi T, Nawata T |
229 - 233 |
Specific character of melt growth of low-temperature phase of aluminum beryllate Gurov VV, Tsvetkov EG |
234 - 239 |
Silver nanoclusters formation in ion-exchanged glasses by thermal annealing, UV-laser and X-ray irradiation Zhang J, Dong W, Sheng JW, Zheng JW, Li J, Qiao L, Jiang LQ |
240 - 244 |
Crystal growth of La2NaTaO6: A new monoclinically distorted double perovskite Roof IP, Smith MD, zur Loye HC |
245 - 252 |
Laser ablation condensation of defective Si4+-doped chromium oxide nanocrystals Lin CH, Chen SY, Shen P |
253 - 260 |
Orthorhombic Pbcn SnO2 nanowires for gas sensing applications Arbiol J, Comini E, Faglia G, Sberveglieri G, Morante JR |