화학공학소재연구정보센터
Journal of Crystal Growth, Vol.310, No.1, 51-56, 2008
Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces
Molecular beam deposition systems allow for unparalleled control of film composition and structure. This article addresses the capacity for controlling metal and oxidant fluxes in the Yb/O-2 system to access the metastable phase ytterbiurn monoxide (YbO). Experiments exploring the growth of polycrystalline YbOx films by molecular beam deposition demonstrate that a 2:1 molar ratio of Yb:O-2 fluxes is necessary to achieve preferential growth of the divalent oxide. Applying similar deposition conditions to a (0 0 1) GaN surface leads to the growth of epitaxial (1 1 1) YbO films. Similar to other rocksalt oxides grown on GaN surfaces, YbO films display a 3D growth mechanism that leads to a grainy morphology with crystallites of 50 nm lateral dimensions. Rocking curves in omega and phi have full-width half-maximum values of 1.77 degrees and 4.1 degrees, respectively; further improvements in crystal quality appear to be limited by the thermal stability of the YbO phase. (C) 2007 Elsevier B.V. All rights reserved.