Thin Solid Films

Thin Solid Films, Vol.518, No.9 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (65 articles)

2299 - 2300	Symposium I: Silicon and germanium issues for future CMOS devices Preface Pelaz L, Mirabella S, Larsen AN
2301 - 2306	Si versus Ge for future microelectronics Claeys C, Mitard J, Eneman G, Meuris M, Simon E
2307 - 2313	Amorphization, recrystallization and end of range defects in germanium Claverie A, Koffel S, Cherkashin N, Benassayag G, Scheiblin P
2314 - 2316	Divacancies at room temperature in germanium Slotte J, Kuitunen K, Kilpelainen S, Tuomisto F, Capan I
2317 - 2322	Hydrogen in amorphous Si and Ge during solid phase epitaxy Johnson BC, Caradonna P, Pyke DJ, McCallum JC, Gortmaker P
2323 - 2325	Honeycomb voids due to ion implantation in germanium Kaiser RJ, Koffel S, Pichler P, Bauer AJ, Amon B, Claverie A, Benassayag G, Scheiblin P, Frey L, Ryssel H
2326 - 2329	Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution Bisognin G, Vangelista S, Mastromatteo M, Napolitani E, De Salvador D, Carnera A, Berti M, Bruno E, Scapellato G, Terrasi A
2330 - 2333	Majority carrier capture rates for transition metal impurities in germanium Lauwaert J, Clauws P
2334 - 2337	High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon Chen JH, Ma XY, Yang DR
2338 - 2341	Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium Fazzini PF, Cristiano F, Talbot E, Ben Assayag G, Paul S, Lerch W, Pakfar A, Hartmann JM
2342 - 2345	Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions Yang HG, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S
2346 - 2349	Correlated out-diffusion of nitrogen and in-diffusion of self-interstitials resulting in elimination of nitrogen-related deep centres Voronkov VV, Falster R
2350 - 2353	Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 degrees C Voronkova GI, Batunina AV, Voronkov VV, Falster R, Golovina VN, Guliaeva AS, Tiurina NB
2354 - 2356	Effect of Si and He implantation in the formation of ultra shallow junctions in Si Xu M, Regula G, Daineche R, Oliviero E, Hakim B, Ntsoenzok E, Pichaud B
2357 - 2360	Thermally activated conduction mechanisms in Silicon Nitride MIS structures Kanapitsas A, Tsonos C, Triantis D, Stavrakas I, Anastasiadis C, Photopoulos P, Pissis P, Vamvakas VE
2361 - 2364	Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance Nguyen APD, Stesmans A, Afanas'ev VV, Lieten RR, Borghs G
2365 - 2369	Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing Sahin D, Yildiz I, Gencer AI, Aygun G, Slaoui A, Turan R
2370 - 2373	Interdiffusion and growth of chromium silicide at the interface of Cr/Si(As) system during rapid thermal annealing Benkherbache H, Merabet A
2374 - 2376	Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface Kropman D, Mellikov E, Opik A, Lott K, Karner T, Heinmaa I, Laas T, Medvid A, Skorupa W, Prucnal S, Rebohle L, Zvyagin S, Cizmar E, Ozerov M, Wosnitza J
2377 - 2380	Formation of germanates on germanium by chemical vapor treatment Kalem S, Arthursson O, Romandic I
2381 - 2385	Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si Coutinho J, Castro F, Torres VJB, Carvalho A, Barroso M, Briddon PR
2386 - 2389	Radiation enhanced diffusion of B in crystalline Ge Bruno E, Mirabella S, Scapellato G, Impellizzeri G, Terrasi A, Priolo F, Napolitani E, De Salvador D, Mastromatteo M, Carnera A
2390 - 2393	Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p plus polycrystalline silicon gate used in CMOS technologies Colin A, Morin P, Beneyton R, Pinzelli L, Mathiot D, Fogarassy E
2394 - 2397	Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration Canneaux T, Mathiot D, Ponpon JP, Leroy Y
2398 - 2401	Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate Duguay S, Ngamo M, Fazzini PF, Cristiano F, Daoud K, Pareige P
2402 - 2405	Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography Ngamo M, Duguay S, Pichler P, Daoud K, Pareige P
2406 - 2408	Atomic-scale study of the role of carbon on boron clustering Philippe T, Duguay S, Grob JJ, Mathiot D, Blavette D
2409 - 2412	Equilibrium segregation coefficient and solid solubility of B in Czochralski Ge crystal growth Taishi T, Ohno Y, Yonenaga I
2413 - 2417	Theory of defects in Si and Ge: Past, present and recent developments Estreicher SK, Backlund D, Gibbons TM
2418 - 2421	First-principles study of near surface point defects stability in Si (100) and SiGe(100) Fetah S, Chikouche A, Dkhissi A, Esteve A, Rouhani MD, Landa G, Pochet P
2422 - 2426	Molecular dynamics simulation of silicon oxidization Ganster P, Treglia G, Lancon F, Pochet P
2427 - 2430	Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs Bazizi EM, Pakfar A, Fazzini PF, Cristiano F, Tavernier C, Claverie A, Zographos N, Zechner C, Scheid E
2431 - 2436	Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100) Conde JC, Martin E, Gontad F, Chiussi S, Fornarini L, Leon B
2437 - 2441	Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys Michaillat M, Rideau D, Aniel F, Tavernier C, Jaouen H
2442 - 2447	Overlayer stress effects on defect formation in Si and Ge Cowern NEB, Bennett NS, Ahn C, Yoon JC, Hamm S, Lerch W, Kheyrandish H, Cristiano F, Pakfar A
2448 - 2453	Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures Castrillo P, Jaraiz M, Pinacho R, Rubio JE
2454 - 2457	Formation of uniaxially strained SiGe by selective ion implantation technique Sawano K, Hoshi Y, Yamada A, Hiraoka Y, Usami N, Arimoto K, Nakagawa K, Shiraki Y
2458 - 2461	Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates Figuet C, Kononchuk O
2462 - 2465	Efficient relaxation of strained-SiGe layers induced by thermal oxidation Jang JH, Son SY, Lim W, Phen MS, Siebein K, Craciun V
2466 - 2469	Tensile strain engineering of Si thin films using porous Si substrates Boucherif A, Blanchard NP, Regreny P, Marty O, Guillot G, Grenet G, Lysenko V
2470 - 2473	325 nm-laser-excited micro-photoluminescence for strained Si films Wang D, Yang HG, Kitamura T, Nakashima H
2474 - 2477	Dopant incorporation in thin strained Si layers implanted with Sb Azarov AY, Zamani A, Radamson HH, Vines L, Kuznetsov AY, Hallen A
2478 - 2484	Future challenges in CMOS process modeling Pichler P, Burenkov A, Lorenz J, Kampen C, Frey L
2485 - 2488	Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes Auret FD, Coelho SMM, Myburg G, van Rensburg PJJ, Meyer WE
2489 - 2492	P plus /n junction leakage in thin selectively grown Ge-in-STI substrates Eneman G, Yang R, Wang G, De Jaeger B, Loo R, Claeys C, Caymax M, Meuris M, Heyns MM, Simoen E
2493 - 2496	Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs Simoen E, Firrincieli A, Leys F, Loo R, De Jaeger B, Mitard J, Claeys C
2497 - 2500	I-V and low frequency noise characterization of poly and amorphous silicon Ti- and Co-salicide resistors Raoult J, Pascal F, Leyris C
2501 - 2504	Germanium on insulator near-infrared photodetectors fabricated by layer transfer Sorianello V, De Iacovo A, Colace L, Assanto G, Fulgoni D, Nash L, Palmer M
2505 - 2508	Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers Hirayama K, Kira W, Yoshino K, Yang HG, Wang D, Nakashima H
2509 - 2512	Effects of tunnel oxide process on SONOS flash memory characteristics Li DH, Park IH, Yun JG, Park BG
2513 - 2516	Device performance of p-Ge MOSFETs at liquid nitrogen temperature Ohyama H, Sukizaki H, Takakura K, Motoki M, Matsuo K, Nakamura H, Sawada M, Midorikawa C, Kuboyama S, De Jaeger B, Simoen E, Claeys C
2517 - 2520	Effects of electron irradiation on SiGe devices Ohyama H, Nagano T, Takakura K, Motoki M, Matsuo K, Nakamura H, Sawada M, Kuboyama S, Gonzalez MB, Simoen E, Eneman G, Claeys C
2521 - 2523	Sub-threshold study of undoped trigate nFinFET Tettamanzi GC, Lansbergen GP, Paul A, Lee S, Deosarran PA, Collaert N, Klimeck G, Biesemans S, Rogge S
2524 - 2527	Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport Johnson BC, McCallum JC, van Beveren LHW, Gauja E
2528 - 2530	Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 degrees C by rf-PECVD Labrune M, Moreno M, Cabarrocas PRI
2531 - 2537	Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menendez J
2538 - 2541	Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches Wang G, Loo R, Takeuchi S, Souriau L, Lin JC, Moussa A, Bender H, De Jaeger B, Ong P, Lee W, Meuris M, Caymax M, Vandervorst W, Blanpain B, Heyns MM
2542 - 2545	Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy Kociniewski T, Fossard F, Boulmer J, Bouchier D
2546 - 2550	Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy Fissel A, Dargis R, Bugiel E, Schwendt D, Wietler T, Krugener J, Laha A, Osten HJ
2551 - 2554	Non-melting annealing of silicon by CO2 laser Florakis A, Verrelli E, Giubertoni D, Tzortzis G, Tsoukalas D
2555 - 2561	Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures Wolfsteller A, Geyer N, Nguyen-Duc TK, Das Anungo P, Zakharov ND, Reiche M, Erfurth W, Blumtritt H, Werner P, Gosele U
2562 - 2564	Influence of O contamination and Au cluster properties on the structural features of Si nanowires Pecora EF, Irrera A, Priolo F
2565 - 2568	Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET Moers J, Gerharz J, Rinke G, Mussler G, Trellenkamp S, Grutzmacher D
2569 - 2572	Structural study of Si1-xGex nanocrystals embedded in SiO2 films Pinto SRC, Kashtiban RJ, Rolo AG, Buljan M, Chahboun A, Bangert U, Barradas NP, Alves E, Gomes MJM
2573 - 2575	Ordered Ge-dot arrays in a Si-waveguide for 1.5 mu m detectors Lavchiev V, Chen G, Jantsch W