Device performance of p-Ge MOSFETs at liquid nitrogen temperature

Ohyama H; Sukizaki H; Takakura K; Motoki M; Matsuo K; Nakamura H; Sawada M; Midorikawa C; Kuboyama S; De Jaeger B; Simoen E; Claeys C

Thin Solid Films, Vol.518, No.9, 2513-2516, 2010

DOI10.1016/j.tsf.2009.10.168 Export Citation

Device performance of p-Ge MOSFETs at liquid nitrogen temperature

Ohyama H, Sukizaki H, Takakura K, Motoki M, Matsuo K, Nakamura H, Sawada M, Midorikawa C, Kuboyama S, De Jaeger B, Simoen E, Claeys C

The device performance of p-channel Ge MOSFETs at liquid nitrogen temperature is reported and initial results of room temperature irradiation with 2-MeV electrons oil the cryogenic device performance is described It is shown that at 77 K an increase of the drain current and g(m) is observed This increase of the g(m) can be explained by considering the balance between reduced phonon scattering oil the one hand and increased Coulomb scattering by interface states, on the other After irradiation, a slight negative shift of the threshold voltage and a decrease of the drain current for input and output characteristics have been observed together with a decrease of the transconductance (g(m)). (c) 2010 Elsevier B.V. All rights reserved

Keywords:p-Ge MOSFET;Electron irradiation;Radiation damage;Degradation;Liquid nitrogen temperature