Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.22, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (110 articles)

L11 - L14	Fabrication of 100 nm pitch copper interconnects by electron beam lithography Wu W, Jonckheere R, Tokei Z, Brongersma SH, Van Hove M, Maez K
L15 - L16	Nonorthogonal wafer dicing for waveguide, microelectromechanical systems, and nanotechnology applications Pau S, Taylor JA, Pai CS
1609 - 1635	Nanoscale measurements and manipulation Colton RJ
1636 - 1642	High field-emission current of carbon nanotubes grown on TiN-coated Ta substrate for electron emitters in a microwave power amplifier Han JH, Lee TY, Kim DY, Yoo JB, Park CY, Choi JJ, Jung T, Han IT, Jung JE, Kim JM
1643 - 1652	Emission characteristics of NbC/Nb field emitters Charbonnier FM, Southall LA, Mackie WA
1653 - 1657	Study of highly selective, wet gate recess process for Al0.25Ga0.75As/GaAs based pseudomorphic high electron mobility transistors Khatri R, Radhakrishnan K
1658 - 1661	Nanomechanical structures with 91 MHz resonance frequency fabricated by local deposition and dry etching Kim GM, Kawai S, Nagashio M, Kawakatsu H, Brugger J
1662 - 1668	Etching characteristics of platinum in inductively coupled plasma using Cl-2/CO Kim JH, Kim KW, Woo SI
1669 - 1671	Formation of silicon nanocrystals in SiO2 by oxireduction reaction induced by impurity implantation and annealing Jacobsohn LG, Zanatta AR, Nastasi M
1672 - 1678	Fabrication of three-dimensional microstructures by two-dimensional slice by slice approaching via focused ion beam milling Fu Y, Bryan NKA
1679 - 1687	Multivariable control of multizone chemical mechanical polishing Shiu SJ, Yu CC, Shen SH
1688 - 1693	Observation and evaluation of flaked particle behavior in magnetically enhanced reactive ion etching equipment using a dipole ring magnet Moriya T, Nagaike H, Denpoh K, Morimoto T, Aomori M, Kawaguchi S, Shimada M, Okuyama K
1694 - 1698	Structural characterization of nanocomposite Ti-Si-N coatings prepared by pulsed dc plasma-enhanced chemical vapor deposition Ma SL, Ma DY, Xu KW, Jie WQ
1699 - 1704	Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs Cheng SY, Chen CY, Chen JY, Chuang HM, Yen CH, Liu WC
1705 - 1710	Solid-phase reaction and Schottky contact properties of Co/n-poly-Si0.84Ge0.16/n-Si(100) Wang GW, Ru GP, Qu XP, Li BZ
1711 - 1716	Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate) Hu WC, Sarveswaran K, Lieberman M, Bernstein GH
1717 - 1722	Study of structural and microstructural properties of AIN films deposited on silicon and quartz substrates for surface acoustic wave devices Assouar MB, Elmazria O, Elhakiki M, Alnot P
1723 - 1726	Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication Lin CK, Wang WK, Hwu MJ, Chan YJ
1727 - 1730	Si diffusion in p-GaN Pan CJ, Chi GC, Pong BJ, Sheu JK, Chen JY
1731 - 1737	Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition Chen XY, Lu YF, Wu YH, Cho BJ, Yang BJ, Liew TYF
1738 - 1745	Quantitative analysis of deuterium and tritium in erbium hydride films of neutron tube targets Bach HT, Steinkruger FJ, Chamberlin WS, Walthers CR
1746 - 1749	Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy Onomitsu K, Fukui H, Maeda T, Hirayama Y, Horikoshi Y
1750 - 1754	Etch rate and surface morphology control in photoelectrochemical etching of GaN Yang B, Fay P
1755 - 1758	Structural and electrical properties of HfOxNy and HfO2 gate dielectrics in TaN gated nMOSCAP and nMOSFET devices Choi KJ, Kim JH, Yoon SG, Shin WC
1759 - 1763	Rigid organic molds for nanoimprint lithography by replica molding of high glass transition temperature polymers Pisignano D, D'Amone S, Gigli G, Cingolani R
1764 - 1769	Soft lithography molding of polymer integrated optical devices: Reduction of the background residue Paloczi GT, Huang Y, Scheuer J, Yariv A
1770 - 1775	Nanoimprint lithography in the cyclic olefin copolymer, Topas((R)), a highly ultraviolet-transparent and chemically resistant thermoplast Nielsen T, Nilsson D, Bundgaard F, Shi P, Szabo P, Geschke O, Kristensen A
1776 - 1783	High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation Alterovitz SA, Mueller CH, Croke ET
1784 - 1787	Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes Ichihara T, Honda Y, Baba T, Komoda T, Koshida N
1788 - 1791	High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio Kotlyar MV, O'Faolain L, Wilson R, Krauss TF
1792 - 1796	Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application Cheng YL, Wang YL, Lan JK, Wu SA, Chang SC, Lo KY, Feng MS
1797 - 1802	In situ nanoscale observation and control of electron-beam-induced cluster formation Adelung R, Ernst F, Zheng N, Landau U
1803 - 1806	Electron-beam induced initial growth of platinum films using Pt(PF3)(4) Wang S, Sun YM, Wang Q, White JM
1807 - 1810	50 nm InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors using double exposure at 50 kV electron-beam lithography without dielectric support Kim SC, Lim OK, Lee HS, Baek TJ, Shin DH, Rhee JK
1811 - 1821	Gas phase reaction products during tungsten atomic layer deposition using WF6 and Si2H6 Grubbs RK, Steinmetz NJ, George SM
1822 - 1829	Real time spectroscopic ellipsometry study during the growth of nanocrystalline nitride protective coatings Aouadi SM, Debessai M, Tomek R, Maeruf T
1830 - 1833	Surface and grain boundary scattering studied in beveled polycrystalline thin copper films Zhang W, Brongersma SH, Clarysse T, Terzieva V, Rosseel E, Vandervorst W, Maex K
1834 - 1837	Low-temperature growth of carbon nanotube by thermal chemical vapor deposition with FeZrN catalyst Shiroishi T, Sawada T, Hosono A, Nakata S, Kanazawa Y, Takai M
1838 - 1843	Nitrogen incorporation engineering and electrical properties of high-k gate dielectric (HfO2 and Al2O3) films on Si(100) substrate Lee C, Choi J, Cho M, Park J, Hwang CS, Kim HJ
1844 - 1850	Bias-temperature stressing analysis on the stability of an ultrathin Ta diffusion barrier Lim BK, Park HS, Chin LK, Woo SW, See AKH, Seet CS, Lee TJ, Yakovlev NL
1851 - 1857	High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact Kim SY, Jang HW, Lee JL
1858 - 1868	Resist-pattern transformation studied by x-ray photoelectron spectroscopy after exposure to reactive plasmas. I. Methodology and examples Pargon E, Joubert O, Posseme N, Vallier L
1869 - 1879	Characterization of resist-trimming processes by quasi in situ x-ray photoelectron spectroscopy Pargon E, Joubert O
1880 - 1884	Real-time microscopic observation of emission fluctuation on Mo-tip field emitter array caused by introduced gas Minami K, Yamane K, Nakane H, Adachi H
1885 - 1892	Wet chemical cleaning of plasma oxide grown on heated (001)InP surfaces Lita B, Pluchery O, Opila RL, Chabal YJ, Bunea G, Holman JP, Bekos EJ
1893 - 1898	Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates Wan A, Menon V, Forrest SR, Wasserman D, Lyon SA, Kahn A
1899 - 1911	Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering McGill LM, Fitzgerald EA, Kim AY, Huang JW, Yi SS, Grillot PN, Stockman SA
1912 - 1922	Topographic and kinetic effects of the SF6/O-2 rate during a cryogenic etching process of silicon Marcos G, Rhallabi A, Ranson P
1923 - 1930	Generation of nano-sized free standing single crystal silicon particles Dong Y, Bapat A, Hilchie S, Kortshagen U, Campbell SA
1931 - 1934	Chemical vapor deposition-physical vapor deposition aluminum plug process for dynamic random-access memory applications Lee WJ, Rha SK
1935 - 1939	Self-assembling growth of (Ba,Sr)TiO3 epitaxial thin films Li YR, Li JL, Zhang Y, Deng XW, Liu XZ, Tao BW
1940 - 1948	Thickness dependence of structural and electrical characteristics of ZrO2 thin films as grown on Si by chemical-vapor deposition Huang SS, Wu TB
1949 - 1952	Nanoscale two-dimensional patterning on Si(001) by large-area interferometric lithography and anisotropic wet etching Lee SC, Brueck SRJ
1953 - 1957	Effect of sidewall roughness on the bottom etch properties of an SiO2 trench produced in a CF4 plasma Hwang SW, Lee GR, Min JH, Moon SH
1958 - 1963	Field emission characteristics of BN nanofilms grown on GaN substrates Luo HT, Funakawa S, Shen WZ, Sugino T
1964 - 1969	Structuring of GaAs. I. Chemical dry etching: Temperature and chlorine pressure dependence of etch rates Dienelt J, von Sonntag J, Zimmer K, Rauschenbach B
1970 - 1973	Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers Huang CY, Wu MC, Yu HC, Jiang WJ, Wang JM, Sung CP
1974 - 1981	Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions Constantoudis V, Patsis GP, Leunissen LHA, Gogolides E
1982 - 1986	Comparison of a new photoresist (DiaPlate 133) with SU-8 using both x-ray and ion beam lithographies Gonin Y, Munnik F, Benninger F, Dias F, Mikhailov S
1989 - 1989	Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces - Preface Hasegawa H, Aspnes DE
1990 - 1994	Carbon nanotube networks: Nanomaterial for macroelectronic applications Snow ES, Novak JP, Lay MD, Houser EH, Perkins FK, Campbell PM
1995 - 1999	Charge writing on the nanoscale: From nanopatterning to molecular docking Wilks SP, Maffeis TGG, Owen GT, Teng KS, Penny MW, Ferkel H
2000 - 2004	Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si(100) substrates Fleming L, Ulrich MD, Efimenko K, Genzer J, Chan ASY, Madey TE, Oh SJ, Zhou O, Rowe JE
2005 - 2007	Atomic resolution scanning tunneling microscope study of single-wailed carbon nanotubes on GaAs(110) Ruppalt LB, Albrecht PM, Lyding JW
2008 - 2013	Metallic nanostructures on Co/GaAs(001)(4x2) surfaces Ludge K, Vogt P, Richter W, Fimland BO, Braun W, Esser N
2014 - 2017	Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy Teng KS, Brown MR, Wilks SP, Sobiesierski A, Smowton PM, Blood P
2018 - 2025	Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces Ebert P, Jager ND, Urban K, Weber ER
2026 - 2029	Atomic scale friction of nanoscale clusters Ohno K, Nitta T, Nakamura J, Natori A
2030 - 2034	Nanoscale current transport in epitaxial SrTiO3 on n(+)-Si investigated with conductive atomic force microscopy Schaadt DM, Yu ET, Vaithyanathan V, Schlom DG
2035 - 2038	Controlled decoherence of a charge qubit in a double quantum dot Fujisawa T, Hayashi T, Hirayama Y
2039 - 2044	Resonant tunneling behavior and discrete dopant effects in narrow ultrashort ballistic silicon-on-insulator metal-oxide-semiconductor field-effect transistors Gilbert MJ, Ferry DK
2045 - 2050	High field transport in GaN/AlGaN heterostructures Barker JM, Ferry DK, Goodnick SM, Koleske DD, Allerman A, Shul RJ
2051 - 2058	Interpretation of current transport properties at Ni/n-GaN Schottky interfaces Sawada T, Kimura N, Imai K, Suzuki K, Tanahashi K
2059 - 2062	Power loss measurements in quasi-1D and quasi-2D systems in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure Prasad C, Ferry DK, Wieder HH
2063 - 2067	Interface recombination velocity measurement by a contactless microwave technique Ahrenkiel RK, Dashdorj J
2068 - 2072	Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001) Ding Z, Thibado PM, Awo-Affouda C, LaBella VP
2073 - 2078	Structural and magnetic properties of epitaxial Fe3Si/GaAs(001) hybrid structures Herfort J, Schonherr HP, Friedland KJ, Ploog KH
2079 - 2083	In situ investigation of MnAs/GaAs(001) growth and interface structure using synchrotron x-ray diffraction Satapathy DK, Jenichen B, Kaganer VM, Braun W, Daweritz L, Ploog KH
2084 - 2086	Schottky junction properties on high quality boron-doped homoepitaxial diamond thin films Chen YG, Ogura M, Okushi H
2087 - 2096	Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface Lucovsky G, Phillips JC
2097 - 2104	Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics Lucovsky G, Maria JP, Phillips JC
2105 - 2109	Interfacial properties of ultra thin ZrxSi1-xO2 with compositional gradation grown on Si(100) using Zr[N(C2H5)(2)](4) and Si(OC4H9)(4) Kim J, Yong K
2110 - 2112	Treatment of interface roughness in SOI-MESFETs Khan T, Vasileska D, Thornton TJ
2113 - 2120	Surface potential and morphology issues of annealed (HfO2)(x)(SiO2)(1-x) gate oxides Ludeke R, Lysaght P, Cartier E, Gusev E, Chudzik M, Foran B, Bersuker G
2121 - 2127	Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments Triyoso DH, Hegde RI, Grant J, Fejes P, Liu R, Roan D, Ramon M, Werho D, Rai R, La LB, Baker J, Garza C, Guenther T, White BE, Tobin PJ
2128 - 2131	Roles of nitrogen incorporation in HfAlOx(N) gate dielectrics for suppression of boron penetration Nabatame T, Iwamoto K, Yamamoto K, Tominaga K, Hisamatsu H, Ohno M, Akiyama K, Ikeda M, Nishimura T, Ota H, Horikawa T, Toriumi A
2132 - 2138	X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H
2139 - 2143	Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001)sapphire and their properties Araki T, Saito Y, Yamaguchi T, Kurouchi M, Nanishi Y, Naoi H
2144 - 2148	Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor Lee SH, Boo JH, Lee SY, Yoo SH, Kim CG, Lee YK, Kim Y
2149 - 2154	High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure VanMil BL, Guo HC, Holbert LJ, Lee K, Myers TH, Liu T, Korakakis D
2155 - 2157	Low-temperature growth of GaN layers on (0001)6H-SiC by compound source molecular beam epitaxy Honda T, Hama M, Aoki Y, Akiyama M, Obinata N, Kawanishi H
2158 - 2164	Improved surface morphology in GaN homoepitaxy by NH3-source molecular-beam epitaxy Koida T, Uchinuma Y, Kikuchi J, Wang KR, Terazaki M, Onuma T, Keading JF, Sharma R, Nakamura S, Chichibu SF
2165 - 2168	Characterization of metalorganic chemical vapor deposition growth of cubic GaN by in situ x-ray diffraction Schmidegg K, Kharchenko A, Bonanni A, Sitter H, Bethke J, Lischka K
2169 - 2174	Analysis of interface electronic structure in ln(x)Ga(1-x)N/GaN heterostructures Zhang H, Miller EJ, Yu ET, Poblenz C, Speck JS
2175 - 2178	Indium nitride: Evidence of electron accumulation Veal TD, Mahboob I, Piper LFJ, McConville CF, Lu H, Schaff WJ
2179 - 2189	Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model Kotani J, Hashizume T, Hasegawa H
2190 - 2194	Optical properties of wurtzite and zinc-blende GaN/AlN quantum dots Fonoberov VA, Balandin AA
2195 - 2200	Correlation between interface structure and light emission at 1.3-1.55 mu m of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates Trampert A, Chauveau JM, Ploog KH, Tournie E, Guzman A
2201 - 2204	Size selection of oxidized GaN crystallites and their cathodoluminescence properties Akiyama M, Egawa S, Matsukawa K, Honda T, Kawanishi H
2205 - 2215	Experimental determination of valence band maxima for SrTiO3, TiO2, and SrO and the associated valence band offsets with Si(001) Chambers SA, Droubay T, Kaspar TC, Gutowski M
2216 - 2219	Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties Jeong SH, Lim DC, Jee HG, Moon OM, Jung CK, Moon JS, Kim SK, Lee SB, Boo JH
2220 - 2225	In situ monitoring of Zn* and Mg* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and Mg0.06Zn0.94O films Koyama T, Ohmori T, Shibata N, Onuma T, Chichibu SF
2226 - 2232	Initial oxide/SiC interface formation on C-terminated beta-SiC(100) c(2X2) and graphitic C-rich beta-SiC(100) 1X1 surfaces Silly MG, Roy J, Enriquez H, Soukiassian P, Crotti C, Fontana S, Perfetti P
2233 - 2239	Real-time characterization of GaSb homo- and heteroepitaxy Kim S, Flock KL, Asar M, Kim IK, Aspnes DE
2240 - 2243	Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering Heroux JB, Pei CW, Wang WI
2244 - 2249	Fundamental reactions controlling anion exchange during the synthesis of Sb/As mixed-anion heterojunctions Brown AS, Losurdo M, Bruno G, Brown T, May G
2250 - 2256	Cation variations at semiconductor interfaces: ZnSe(001)/GaAs(001) superlattices Farrell HH, LaViolette RA
2257 - 2260	On the formation mechanism of epitaxial Ge islands on partially relaxed SiGe buffer layers Kim HJ, Liu J, Zhao ZM, Xie YH
2261 - 2265	Planar InAs growth on GaAs(001) and subsequent quantum dot formation by a surface induced morphological instability Eyink KG, Mahalingam K, Pitz J, Smith H, Grazulis L
2266 - 2274	Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates Sato T, Tamai I, Hasegawa H