ZrxSi1-xO2 films were deposited by using Zr[N(C2H5)(2)](4) and Si(OC4H9)(4). Composition (x) of a 4 nm thick ZrxSi1-xO2 was investigated by Zr 3d, Si 2p, and O 1s x-ray photoelectron spectroscopy depth profiles. The Zr/(Zr+Si) ratio gradationally changed from similar to0.1 at the silicate film surface to similar to0.67 at the ZrxSi1-xO2-Si interface during Ar+ sputtering. An atomically flat interface with no sub-SiO2 interfacial layers was observed. The dielectric constants were approximately 9 for both Zr-silicate films as-deposited and annealed at 500 degreesC in oxygen ambient. When annealed in oxygen ambient, the flat band approached the ideal value in C-V curve. The leakage current density of the Zr-silicate films as-deposited and annealed at 500 degreesC was similar to5 X 10(-4) and similar to3 X 10(-8) A/cm(2), respectively, at a bias of 1.0 V. (C) 2004 American Vacuum Society.