Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.17, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (85 articles)

905 - 907	Alignment with exposed resist in photolithography Burm J, Tate A, Kopf RF, Ryan RW, Hamm RA, Chirovsky LM
908 - 920	Spatial frequency analysis of optical lithography resolution enhancement techniques Brueck SRJ, Chen XL
921 - 929	Experimental comparison of off-axis illumination and imaging interferometric lithography Chen XL, Brueck SRJ
930 - 932	Amorphous carbon films for use as both variable-transmission apertures and attenuated phase shift masks for deep ultraviolet lithography Windt DL, Cirelli RA
933 - 938	High resolution organic resists for charged particle lithography Ochiai Y, Manako S, Fujita J, Nomura E
939 - 944	Formation and growth of CoSi2 on (001)Si inside 0.2-2 mu m oxide openings prepared by electron-beam lithography Yew JY, Chen LJ, Wu WF
945 - 948	Focused ion-beam structuring of Si and Si/CoSi2 heterostructures using adsorbed hydrogen as a resist Fuhrmann H, Dobeli M, Muhle R, Suter M
949 - 956	Formation and micromachining of Teflon (fluorocarbon polymer) film by a completely dry process using synchrotron radiation Inayoshi M, Ito M, Hori M, Goto T, Hiramatsu M
957 - 960	Novel process for SiO2/Si selective etching using a novel gas source for preventing global warming Fujita K, Ito M, Hori M, Goto T
961 - 964	Model for etch depth dependence on GaAs via hole diameter Abraham-Shrauner B, Nordheden KJ, Lee YS
965 - 969	Inductively coupled plasma etching of III-V antimonides in BCl3/Ar and Cl-2/Ar Zhang L, Lester LF, Shul RJ, Willison CG, Leavitt RP
970 - 977	Dry oxidation resistance of ultrathin nitride films: Ordered and amorphous silicon nitride on Si(111) Wallace RM, Wei Y
978 - 982	Nanometer-scale Si-selective epitaxial growth using an ultrathin SiO2 mask Miyata N, Watanabe H, Ichikawa M
983 - 988	Adsorption of atomic hydrogen on the Si(001) 4x3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy Ryu JT, Fuse T, Kubo O, Fujino T, Tani H, Harada T, Saranin AA, Zotov AV, Katayama M, Oura K
989 - 993	Microstructure characterization of oxidized nanocrystalline Si : H film by transmission electron microscopy Lu H, Liu JH, Li W, Chen KJ, Huang XF
994 - 998	Multiple layers of silicon-on-insulator for nanostructure devices Neudeck GW, Pae SW, Denton JP, Su T
999 - 1002	Role of film conformality in charging damage during plasma-assisted interlevel dielectric deposition Hwang GS, Giapis KP
1003 - 1010	Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions Hudait MK, Krupanidhi SB
1011 - 1016	Multiwafer gas source molecular beam epitaxial system for production technology Izumi S, Kouji Y, Hayafuji N
1017 - 1021	Improvement of properties of dynamic random access memories capacitors by PH3 plasma doping process after the formation of hemispherical-grained silicon Moon HS, Choi HS, Jang HG, Hwang CJ, Woo SH, Han IK, Yang HS
1022 - 1027	Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation Boos JB, Bennett BR, Kruppa W, Park D, Mittereder J, Bass R, Twigg ME
1028 - 1033	Formation of W underlayer by switching bias sputtering to plug 0.25 mu m contact holes Onuki J, Nihei M, Suwa M, Goshima H
1034 - 1039	Au/Ge-based Ohmic contact to an AlGaAs InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer Lee JL, Kim YT, Yoo YM, Lee GY
1040 - 1044	B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing Valcheva E, Paskova T, Ivanov IG, Yakimova R, Wahab Q, Savage S, Nordell N, Harris CI
1045 - 1049	Plasma enhanced chemically vapor deposited thin films for microelectromechanical systems applications with tailored optical, thermal, and mechanical properties Horn MW, Goodman RB, Rothchild M
1050 - 1055	Double exchange-related interfacial tunneling and the corresponding giant magnetoresistance in granular La1-xSrxMnO3 perovskites Zhang N, Zhong W, Ding WP
1056 - 1058	Development of an Er-Ni liquid alloy ion source Chao LC, Steckl AJ
1059 - 1063	Nitrogen-incorporated distorted nanocrystalline diamond films: Structure and field emission properties Wu KH, Wang EG, Chen J, Xu NS
1064 - 1071	Field emission spectroscopy from discharge activated chemical vapor deposition diamond Groning O, Kuttel OM, Groning P, Schlapbach L
1072 - 1075	Field emission properties of the polycrystalline diamond-coated silicon emitters Yang SH, Yokoyama M
1076 - 1079	Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films Komoda T, Sheng X, Koshida N
1080 - 1084	High pressure, high temperature scanning tunneling microscopy Jensen JA, Rider KB, Chen Y, Salmeron M, Somorjai GA
1085 - 1086	Application of dichromated gelatin for dry developed lithographic techniques on GaAs Villalvilla JM, Valles-Abarca JA, Quintana JA, Crespo J
1087 - 1089	Patterning of octadecylsiloxane self-assembled monolayers on Si(100) using Ar(P-3(0,2)) atoms Hill SB, Haich CA, Dunning FB, Walters GK, McClelland JJ, Celotta RJ, Craighead HG, Han J, Tanenbaum DM
1090 - 1093	Collapse behavior of microresist pattern analyzed by the tip indentation method with an atomic force microscope Kawai A
1094 - 1097	Novel metallization technique for filling 100-nm-wide trenches and vias with very high aspect ratio Monteiro OR
1098 - 1100	Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface Murata K, Ito M, Hori M, Goto T
1101 - 1104	Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization Kelsey JE, Goldberg C, Nuesca G, Peterson G, Kaloyeros AE, Arkles B
1105 - 1108	Ordering of InxGa1-xAs quantum dots self-organized on GaAs(311)B substrates Lan S, Akahane K, Song HZ, Okada Y, Kawabe M
1115 - 1115	Papers from the 17th North American Conference on molecular beam epitaxy - Preface Goldman RS
1116 - 1119	Growth and electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon Linder KK, Phillips J, Qasaimeh O, Liu XF, Krishna S, Bhattacharya P
1120 - 1123	Improved size uniformity of InAs quantum dots grown on a lateral composition modulated InGaAs surface Wohlert DE, Cheng KY, Chang KL, Hsieh KC
1124 - 1126	Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy Baklenov O, Nie H, Campbell JC, Streetman BG, Holmes AL
1127 - 1130	Strained InGaAs AlGaAs tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy Shimomura S, Ohta K, Tatsuoka Y, Hiyamizu S, Fujita K, Egami N
1131 - 1135	Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates Hoke WE, Lemonias PJ, Mosca JJ, Lyman PS, Torabi A, Marsh PF, McTaggart RA, Lardizabal SM, Hetzler K
1136 - 1138	InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker Chin TP, Gutierrez-Aitken AL, Cowles J, Kaneshiro EN, Han AC, Block TR, Oki AK, Streit DC
1139 - 1143	Growth of high performance InGaAs InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy Kuo HC, Moser BG, Hsia H, Tang Z, Feng M, Stillman GE, Lin CH, Chen H
1144 - 1146	Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy Yang X, Heroux JB, Jurkovic MJ, Wang WI
1147 - 1150	Fabrication and characterization of a two-dimensional electron gas in modulation doped ZnTe/Cd1-xMnxSe quantum wells Knobel R, Smorchkova IP, Samarth N
1151 - 1154	Study of factors limiting electron mobility in InSb quantum wells Chung SJ, Goldammer KJ, Lindstrom SC, Johnson MB, Santos MB
1155 - 1157	GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy Tatsuoka Y, Kamimoto H, Kitano Y, Kitada T, Shimomura S, Hiyamizu S
1158 - 1162	Analysis of excitonic absorption properties and their electric field dependence in chemical beam epitaxy-grown InAsP InP multiple quantum wells Monier C, Serdiukova I, Aguilar L, Newman F, Vilela MF, Freundlich A
1163 - 1166	Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs Sandhu RS, Bhasin G, Moore CD, U'Ren GD, Goorsky MS, Chin TP, Wojtowicz M, Block TR, Streit DC
1167 - 1170	Larger critical thickness determined by photoluminescence measurements in pseudomorphic In0.25Ga0.75As/Al0.32Ga0.68As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy Nii K, Kuriyama R, Hiraoka T, Kitada T, Shimomura S, Hiyamizu S
1171 - 1174	Photonic band-gap waveguide microcavities: Monorails and air bridges Lim KY, Ripin DJ, Petrich GS, Kolodziejski LA, Ippen EP, Mondol M, Smith HI, Villeneuve PR, Fan S, Joannopoulos JD
1175 - 1179	Substrate preparation and interface grading in InGaAs InAlAs photodiodes grown on InP by molecular-beam epitaxy Lenox C, Nie H, Kinsey G, Hansing C, Campbell JC, Holmes AL, Streetman BG
1180 - 1184	A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide Lubyshev D, Micovic M, Gratteau N, Cai WZ, Miller DL, Ray O, Streater RW, SpringThorpe AJ
1185 - 1189	Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications Kuo HC, Ahmari D, Moser BG, Mu J, Hattendorf M, Scott D, Meyer R, Feng M, Stillman GE
1190 - 1194	Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy Cai WZ, Lubyshev DI, Miller DL, Streater RW, SpringThorpe AJ
1195 - 1199	Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates Birkhahn R, Hudgins R, Lee D, Steckl AJ, Molnar RJ, Saleh A, Zavada JM
1200 - 1204	Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C Specht P, Lutz RC, Zhao R, Weber ER, Liu WK, Bacher K, Towner FJ, Stewart TR, Luysberg M
1205 - 1208	Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy Yang B, Aqariden F, Grein CH, Jandaska A, Lee TS, Nemani A, Rujirawat S, Shi XH, Sumstine M, Velicu S, Sivananthan S
1209 - 1213	In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions Kim E, Berishev I, Bensaoula A, Schultz JA
1214 - 1217	Refractive index measurements of ZnSe-based ternary epitaxial layers grown by molecular-beam epitaxy on GaAs (100) Peiris FC, Lee S, Bindley U, Furdyna JK
1218 - 1222	In situ monitoring of AlGaAs compositions and GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy Taferner WT, Mahalingam K, Dorsey DL, Eyink KG
1223 - 1226	Temperature-composition determination based on modeling of optical constants of III-V compound semiconductors measured by spectroscopic ellipsometry Grassi E, Johnson SR, Beaudoin M, Tsakalis KS
1227 - 1232	Low-temperature molecular beam epitaxy of GaAs: A theoretical investigation of antisite incorporation and reflection high-energy diffraction oscillations Natarajan K, Venkat R, Dorsey DL
1233 - 1236	Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers Beaudoin M, Johnson SR, Boonzaayer MD, Zhang YH, Johs B
1237 - 1240	Closed-loop control of composition and temperature during the growth of InGaAs lattice matched to InP Johnson SR, Grassi E, Beaudoin M, Boonzaayer MD, Tsakalis KS, Zhang YH
1241 - 1245	Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire Piquette EC, Bridger PM, Bandic ZZ, McGill TC
1246 - 1248	Molecular beam epitaxy growth of boron-containing nitrides Gupta VK, Wamsley CC, Koch MW, Wicks GW
1249 - 1251	Native oxides and regrowth on III-N surfaces Gupta VK, Wamsley CC, Koch MW, Wicks GW
1252 - 1254	Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ
1255 - 1258	Defect reduction of ZnxCdyMg1-x-ySe based structures grown on InP by using Zn irradiation of the III-V surface Zeng L, Guo SP, Luo YY, Lin W, Tamargo MC, Xing H, Cargill GS
1259 - 1262	Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surface treatment Mendez-Garcia VH, Lopez-Lopez M, Hernandez-Calderon I
1263 - 1266	Molecular beam epitaxy growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface Wu HZ, Fang XM, Salas R, McAlister D, McCann PJ
1267 - 1271	Effect of an In1-xAlxSb buffer layer on InSb thin film mobility Partin DL, Heremans J, Thrush CM
1272 - 1275	Growth of 1.3 mu m InGaAsN laser material on GaAs by molecular beam epitaxy Mars DE, Babic DI, Kaneko Y, Chang YL, Subramanya S, Kruger J, Perlin P, Weber ER
1276 - 1280	Electron intersubband energy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements Klotzkin D, Phillips J, Jiang H, Singh J, Bhattacharya P
1281 - 1284	Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition source Postigo PA, Lullo G, Choy KH, Fonstad CG
1285 - 1288	InGaAs/GaAs/AlGaAs GRIN-SCH quantum-well lasers grown by solid-source molecular-beam epitaxy using CBr4 doping Gratteau N, Lubyshev D, Miller DL
1289 - 1293	Growth and characterization of epitaxial FexAl1-x/(In,Al)As/InP and III-V/FexAl1-x/(In,Al)As/InP structures Sacks RN, Qin L, Jazwiecki M, Ringel SA, Clevenger MB, Wilt D, Goorsky MS
1294 - 1296	Passivation of GaAs using gallium-gadolinium oxides Kwo J, Murphy DW, Hong M, Mannaerts JP, Opila RL, Masaitis RL, Sergent AM
1297 - 1300	Molecular beam epitaxy of periodic BaF2/PbEuSe layers on Si(111) Fang XM, Wu HZ, Shi Z, McCann PJ, Dai N
1301 - 1303	Molecular beam epitaxy growth of Ge1-yCy alloys on Si (100) with high carbon contents Roe KJ, Dashiell MW, Kolodzey J, Boucaud P, Lourtioz JM