InGaAsN/GaAs quantum wells on GaAs substrates were grown by solid source molecular beam epitaxy using a N-2 radio frequency plasma source. Photoluminescence (PL) reveals a redshift in the PL peak of InGaAsN/GaAs quantum well with increasing N concentration. Rapid thermal annealing (RTA) of InGaAsN/GaAs quantum wells is shown to increase N incorporation and photoluminescence efficiency. A PL peak of 1.35 mu m has been obtained at room temperature from an InGaAsN/GaAs quantum well after RTA at 550 degrees C. Room temperature pulsed operation of InGaAsN/GaAs single quantum well laser was demonstrated.