Our report describes the growth and characterization of self-organized In0.4Ga0.5As/GaAs quantum dots on Si substrates. The size, shape, and density of the dots grown on Si are quite different than dots frown on GaAs substrates under similar conditions. From structural characterization, it is apparent that the dots, themselves, may be defect free. We present electroluminescent characteristics of edge-emitting In0.4Ga0.6As quantum dot lasers grown on Si. The laser spectra indicates the emission wavelength is 1.01 mu m at threshold with a linewidth full width at half maximum similar to 4 Angstrom. We observe a blueshift towards smaller wavelengths with increasing current, suggesting the filling of smaller dots.