Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.16, No.4 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (117 articles)

2003 - 2007	Residual stress in low pressure chemical vapor deposition SiNx films deposited from silane and ammonia Temple-Boyer P, Rossi C, Saint-Etienne E, Scheid E
2008 - 2015	Plasma cleaning and nitridation of sapphire substrates for AlxGa1-xN epitaxy as studied by x-ray photoelectron diffraction Seelmann-Eggebert M, Zimmermann H, Obloh H, Niebuhr R, Wachtendorf B
2016 - 2020	Application of a toroidal plasma source to TiN thin film deposition Zhang BC, Cross RC
2021 - 2030	Plasma-deposited silicon oxide and silicon nitride films on poly(ethylene terephthalate) : A multitechnique study of the interphase regions Sobrinho ASD, Schuhler N, Klemberg-Sapieha JE, Wertheimer MR, Andrews M, Gujrathi SC
2031 - 2036	Reactive ion etching for AlGaInP/GaInP laser structures Juang YZ, Su YK, Chang SJ, Huang DF, Chang SC
2037 - 2041	Reactive ion etching of piezoelectric materials in CF4/CHF3 plasmas Leech PW
2042 - 2046	Deposition and characterization of gold thin films on Si by CF4+O-2 gas microwave plasma Taniguchi Y, Shin-mura T
2047 - 2056	Remote plasma etching of silicon nitride and silicon dioxide using NF3/O-2 gas mixtures Kastenmeier BEE, Matsuo PJ, Oehrlein GS, Langan JG
2057 - 2064	Effects of wall recombination on the etch rate and plasma composition of an etch reactor Font GI, Boyd ID, Balakrishnan J
2065 - 2072	Radial distributions of ion velocity, temperature, and density in ultrahigh-frequency, inductively coupled, and electron cyclotron resonance plasmas Nakano T, Samukawa S
2073 - 2077	Reactive sputtered titanium carbide/nitride and diamondlike carbon coatings Deng JG, Braun M, Wei Y
2078 - 2083	Influence of surface impurities on plasma-driven permeation of deuterium through nickel Hatano Y, Nakamura H, Furuya H, Sugisaki M
2084 - 2092	Properties of various sputter-deposited Cu-N thin films Wang DY, Nakamine N, Hayashi Y
2093 - 2098	Carbon nitride thin-film growth by pulsed laser deposition Chen MY, Murray PT
2099 - 2107	Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas Schaepkens M, Bosch RCM, Standaert TEFM, Oehrlein GS, Cook JM
2108 - 2114	Electrical impedance analysis and etch rate maximization in NF3/Ar discharges Langan JG, Rynders SW, Felker BS, Beck SE
2115 - 2119	Chemical downstream etching of tungsten Blain MG, Jarecki RL, Simonson RJ
2120 - 2124	Electrical and optical properties of amorphous fluorocarbon films prepared by plasma polymerization of perfluoro-1,3-dimethylcyclohexane Weber A, Pockelmann R, Klages CP
2125 - 2131	Metal bonding during sputter film deposition Shimatsu T, Mollema RH, Monsma D, Keim EG, Lodder JC
2132 - 2139	Kinetic energy distribution of nitrogen ions in an electron cyclotron resonance plasma Fan ZY, Newman N
2140 - 2147	Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source Yasutake K, Takeuchi A, Kakiuchi H, Yoshii K
2148 - 2152	Distribution of species within an ethylene electron cyclotron resonance-microwave plasma Webb SF, Gaddy GA, Blumenthal R
2153 - 2161	Inductively coupled plasma etch processes for NiMnSb Hong J, Caballero JA, Lambers ES, Childress JR, Pearton SJ
2162 - 2172	Dually driven radio frequency plasma simulation with a three moment model Kim HC, Manousiouthakis VI
2173 - 2176	Electron velocity distribution functions in a sputtering magnetron discharge for the ExB direction Sheridan TE, Goeckner MJ, Goree J
2177 - 2186	Comparison of plasma chemistries for dry etching thin film electroluminescent display materials Lee JW, Pathangey B, Davidson MR, Holloway PH, Lambers ES, Davydov B, Anderson TJ, Pearton SJ
2187 - 2197	Experiments on the plasma assisted chemical vapor deposition of copper Lakshmanan SK, Gill WN
2198 - 2203	Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor deposition Foster JE, Wendt AE, Wang WW, Booske JH
2204 - 2209	Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries Wang JJ, Lambers ES, Pearton SJ, Ostling M, Zetterling CM, Grow JM, Ren F, Shul RJ
2210 - 2214	Effect of substrate bias on the properties of a-C : H films by direct current saddle-field plasma-enhanced chemical-vapor deposition Yoo YZ, Kim HG, Jang HK, Jeong YG, Kim G
2215 - 2221	Role of oxygen in ion-enhanced etching of poly-Si and WSix with chlorine Kota GP, Coburn JW, Graves DB
2222 - 2226	Surface productions of CF and CF2 radicals in high-density fluorocarbon plasmas Suzuki C, Sasaki K, Kadota K
2227 - 2239	Simulations of BCl3/Cl-2/Ar plasmas with comparisons to diagnostic data Meeks E, Ho P, Ting AL, Buss RJ
2240 - 2244	Role of the bias voltage during the deposition of thin tin oxide films by plasma assisted chemical vapor deposition Arefi-Khonsari F, Hellegouarc'h F, Amouroux J
2245 - 2251	Challenges in electron cyclotron resonance plasma etching of LiNbO3 surface for fabrication of ridge optical waveguides Mitsugi N, Nagata H, Shima K, Tamai M
2252 - 2256	Synchrotron radiation induced SiC formation on Si substrate employing methanol and H radical Ikeda M, Inayoshi M, Hori M, Goto T, Hiramatsu M, Hiraya A
2257 - 2260	Application of target factor analysis and linear least squares fitting to extracting chemical information from Auger depth profiles of a Mo/Si thin multilayer system Morohashi T, Hoshi T, Nikaido H, Kudo M
2261 - 2266	MgO(100) surface relaxation by symmetrized automated tensor low energy electron diffraction analysis Ferry D, Suzanne J, Panella V, Barbieri A, Van Hove MA, Biberian JP
2267 - 2271	Studying low-pressure chemical vapor deposition a-Si : B alloys by optical spectroscopy Yang GR, Zhao YP, Tong BY
2272 - 2276	Defect-associated photoluminescence and rapid thermal annealing effect on SiO2 films grown in the plasma phase Kim K
2277 - 2280	High-quality Fe(001) single crystal films on MgO(001) substrates for electron spectroscopies Bertacco R, De Rossi S, Ciccacci F
2281 - 2286	Microstructural characterization of ion assisted SiO2 thin films by visible and infrared ellipsometry Brunet-Bruneau A, Souche D, Fisson S, Van VN, Vuye G, Abeles F, Rivory J
2287 - 2291	Optical properties of zirconia-yttria single crystal compounds by reflection electron energy loss spectroscopy Yubero F, Espinos JP, Gonzalez-Elipe AR
2292 - 2294	Effect of fractal crystallization on the depositing sequence of a Pd/Ge thin film system Chen ZW, Zhang SY, Tan S, Hou JG, Zhang YH
2295 - 2299	Delamination mechanism in relation to adhesion of cubic boron nitride Kim IH, Kim SH, Kim KB
2300 - 2308	Electrical characterization of the p-Hg1-xZnxTe interface after anodic sulfidization treatments Rousiere O, Lemoine D, Quemerais A, Granger R, Rolland S, Triboulet R
2309 - 2317	Operation and oxidation of thermionic dispenser cathodes studied by high resolution photoemission Bailey P, Cowie BCC, Norman D
2318 - 2325	Soft x-ray photoelectron diffraction study of epitaxial InGaAs/GaAs(001) Proietti MG, Turchini S, Garcia J, Arsenio MC, Casado C, Martelli F, Prosperi T
2326 - 2329	Growth and characterization of epitaxial fcc Fe wedges on diamond (100) Li DQ, Keavney DJ, Pearson J, Jiang JS, Bader SD, Keune W
2330 - 2336	Metrology of sub-0.5 mu m silicon epitaxial films Chen WZ, Reif R
2337 - 2344	Structural characteristics and hardness of zirconium carbide films prepared by tri-ion beam-assisted deposition He XM, Shu L, Li HB, Li HD, Lee ST
2345 - 2349	Improved optical scheme for nonintrusive vapor density monitoring by atomic absorption spectroscopy Ray A, Majumdar A
2350 - 2359	Photoreflectance spectroscopy investigation of two-dimensional cesium metallic clusters on GaAs(100) Paget D, Kierren B, Houdre R
2360 - 2366	Piezoelectric, dielectric, and interfacial properties of aluminum nitride films Liufu D, Kao KC
2367 - 2371	Onset of oscillations during growth on a vicinal surface Harris S
2372 - 2375	Preparation of nearly oxygen-free AlN thin films by pulsed laser deposition He MQ, Cheng NQ, Zhou PZ, Okabe H, Halpern JB
2376 - 2380	Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001) Chegwidden S, Dai ZR, Olmstead MA, Ohuchi FS
2381 - 2384	Thickness distribution in pulsed laser deposited PZT films Tyunina M, Wittborn J, Bjormander C, Rao KV
2385 - 2394	Growth of SiC films via C-60 precursors and a model for the profile development of the silicon underlayer Levinson JA, Hamza AV, Shaqfeh ESG, Balooch M
2395 - 2399	Growth and characterization of potassium-doped superfulleride thin films Swami N, You YJ, Thompson ME, Koel BE
2400 - 2410	Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge : Modeling and comparison with experiment Bogaerts A, Naylor J, Hatcher M, Jones WJ, Mason R
2411 - 2417	Microstructure and electronic properties of the refractory semiconductor ScN grown on Mg0(001) by ultra-high-vacuum reactive magnetron sputter deposition Gall D, Petrov I, Madsen LD, Sundgren JE, Greene JE
2418 - 2422	Quantitative measurement of nodule formation in W-Ti sputtering Lo CF, Draper D
2423 - 2428	Interfacial reaction effects in the growth of MgO on GaAs(001) by reactive molecular beam epitaxy Robey SW
2429 - 2436	Structural coherence of sputtered Ni3Al/Ni multilayers Tixier S, Boni P, Van Swygenhoven H
2437 - 2441	Structural change and heteroepitaxy induced by rapid thermal annealing of CaF2 films on Si(111) Mattoso N, Mosca DH, Schreiner WH, Mazzaro I, Teixeira SR, Macedo WAA, Martins MD
2442 - 2447	PbTiO3 butter layer effects on the structural and electrical properties of Pb(Zr, Ti)O-3 thin films grown by sputtering on silicon substrates Velu G, Haccart T, Jaber B, Remiens D
2448 - 2453	Control of structural, electrical properties of (Ba,Sr)TiO3/RuO2 thin films by the application of amorphous (Ba,Sr)TiO3 layer Paek SH, Lee KS, Seong JY, Choi DK, Kim BS, Park CS
2454 - 2462	Consequences of three-dimensional physical and electromagnetic structures on dust particle trapping in high plasma density material processing discharges Hwang HH, Keiter ER, Kushner MJ
2463 - 2465	Graphite growth influenced by crystallographic faces of Ni films Yudasaka M, Kikuchi R, Ohki Y, Yoshimura S
2466 - 2479	Atomic force microscopy and ellipsometry study of the nucleation and growth mechanism of polycrystalline silicon films on silicon dioxide Basa C, Tinani M, Irene EA
2480 - 2488	Pulsed electron-beam technology for surface modification of metallic materials Proskurovsky DI, Rotshtein VP, Ozur GE, Markov AB, Nazarov DS, Shulov VA, Ivanov YF, Buchheit RG
2489 - 2494	Influences of ion energy on morphology and preferred orientation of chromium thin films prepared by ion beam and vapor deposition Kuratani N, Ebe A, Ogata K
2495 - 2500	In situ growth of evaporated TiO2 thin films using oxygen radicals : Effect of deposition temperature Grahn JV, Linder M, Fredriksson E
2501 - 2504	Preparation of (001) cube textured CeO2 buffer layers on rolling-textured substrates by ion beam assisted pulsed laser deposition Xiong XM, Wang RP, Zhou YL, Guo XX, Lu HB, Pan SH, Yang GZ, Liu CF, Wu X, Zhang XP, Zhou L
2505 - 2509	Effect of bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films deposited on Pt/SiO2/Si by a modified radio-frequency magnetron sputtering technique Yang CH, Yoon SG
2510 - 2516	Nitridation of vacuum evaporated molybdenum films in H-2/N-2 mixtures Amazawa T, Oikawa H
2517 - 2523	Surface characterization of thin films of tetrathiofulvalene 7,7,8,8-tetracyano-p-quinodimethane evaporated on NaCl(001) Fraxedas J, Caro J, Figueras A, Gorostiza P, Sanz F
2524 - 2527	Helium sticking coefficient on cryopanels coated by activated carbon Ozdemir I, Perinic D
2528 - 2538	Chemical and photochemical processes in sulfide passivation of GaAs(100) : In situ optical study and photoemission analysis Berkovits VL, Ulin VP, Paget D, Bonnet JE, L'vova TV, Chiaradia P, Lantratov VM
2539 - 2545	Surface cleaning with hydrogen plasma for low-defect-density ZnSe homoepitaxial growth Ohno T, Ohki A, Matsuoka T
2546 - 2552	Chemical alteration of the native oxide layer on InP(111) by exposure to hyperthermal atomic hydrogen Wolan JT, Hoflund GB
2553 - 2555	Diamond-like bonds in amorphous hydrogenated carbon films induced by x-ray irradiation Sato F, Saito N, Hirano Y, Jayatissa AH, Takizawa K, Kawado S, Kato T, Sugiyama H, Kagoshima Y, Ando M
2556 - 2561	Use of a new type of atomic hydrogen source for cleaning and hydrogenation of compound semiconductive materials Kagadei VA, Proskurovsky DI
2562 - 2566	Synthesis and structure of Al clusters supported on TiO2(110) : A scanning tunneling microscopy study Lai X, Xu C, Goodman DW
2567 - 2571	Surface modification of (100) n-GaAs by radio frequency hydrogen plasmas Sullivan JL, Saied SO, Layberry R, Cardwell MJ
2572 - 2580	Observation of adsorption and reaction of NH3 on crystalline Al2O3 under steady-state conditions using external-reflection infrared spectroscopy Bermudez VM
2581 - 2584	Temperature-programmed desorption study of the etching of Ni(110) with 2,4-pentanedione Nigg HL, Masel RI
2585 - 2590	Heterogeneous reactions of NO2 on NaCl and Al2O3 particles Goodman AL, Miller TM, Grassian VH
2591 - 2594	Electrical properties of (Pb,La)TiO3 thin films deposited by low pressure metal-organic chemical vapor deposition using solid delivery system Shin JC, Lee JM, Hong SK, Cho HJ, Kim KS, Hwang CS, Kim HJ
2595 - 2603	Characteristic losses in metals : Al, Be, and Ni Madden HH, Landers R, Kleiman GG, Zehner DM
2604 - 2607	Copper diffusion in amorphous germanium Doyle JP, Kuznetsov AY, Svensson BG
2608 - 2613	Thermally induced processes in thin layers, obtained by coevaporation of TeO2 and Sn Podolesheva I, Platikanova V, Konstantinov I, Dimov V, Tarassov M
2614 - 2618	General technological modeling method for the design of transparent conductive In2O3 electrodes Golan G, Axelevitch A, Rabinovitch E
2619 - 2624	Boron incorporation with and without atomic hydrogen during the growth of doped layers on Si(100) Silvestre C, Thompson P, Jernigan G, Simons D
2625 - 2631	Evaluation of the ion bombardment energy for growing diamondlike carbon films in an electron cyclotron resonance plasma enhanced chemical vapor deposition Kang DH, Ha SC, Kim KB, Min SH
2632 - 2640	Study of the dynamics of point defects at Si(111)-7x7 surfaces with scanning tunneling microscopy Hwang IS, Lo RL, Tsong TT
2641 - 2645	Efficiency improvement in low temperature metal-oxide-semiconductor solar cells by thin metal film deposition on photon receiving area Lee KC, Hwu JG
2646 - 2652	Improved formation of silicon dioxide films in liquid phase deposition Huang CJ, Houng MP, Wang YH, Wang NF, Chen JR
2653 - 2662	Ballistic electron emission microscopy studies on Au/CaF2/n-Si(111) heterostructures Sumiya T, Miura T, Tanaka S
2663 - 2667	Analysis of GaAs properties under biaxial tensile stress Kim KS, Yang GM, Lee HJ
2668 - 2677	Structure engineering for hillock-free pure aluminum sputter deposition for gate and source line fabrication in active-matrix liquid crystal displays Voutsas AT, Hibino Y, Pethe R, Demaray E
2678 - 2682	Control of performance and stability of thin film diodes using chromium nitride contacts Mc Garvey B, Curran JE, Ford FA, Gale IG, Hewett J, Theobald M
2683 - 2686	Hydrogen passivation at the Al/H : Si(111)-(1x1) interface Grupp C, Taleb-Ibrahimi A
2687 - 2692	Mapping local susceptibility using a scanning coaxial write/read head Strom V, Rao KV
2693 - 2697	Acquisition of clean ultrahigh vacuum using chemical treatment Tatenuma K, Uchida K, Itoh T, Momose T, Ishimaru H
2698 - 2702	Collision cell containment of dense gas targets for high vacuum applications Ketsdever AD, Muntz EP
2703 - 2710	Improvement of turbomolecular pumps for ultraclean, low-pressure, and high-gas-flow processing Ino K, Sekine K, Shibata T, Ohmi T, Maejima Y
2711 - 2717	Achievement of extremely high vacuum in an electrolytically polished stainless steel vacuum chamber Watanabe S, Kurokouchi S, Kato S, Aono M
2718 - 2721	Inner surface modification of 40Cr steel cylinder with a new plasma source ion implantation method Sun M, Yang SZ, Yao WQ
2722 - 2724	Use of 2H-heptafluoropropane, 1-iodoheptafluoropropane, and 2-iodoheptafluoropropane for a high aspect ratio via etch in a high density plasma etch tool Karecki S, Pruette L, Reif R, Beu L, Sparks T, Vartanian V
2725 - 2727	Heteroepitaxial growth of RuO2 thin films on alpha-Al2O3 substrates with CeO2 buffer layers by pulsed laser deposition Chen CL, Jia QX, Lu YC, Smith JL, Mitchell TE
2728 - 2732	Decay length of the pressure dependent deposition rate for magnetron sputtering Drusedau TP, Lohmann M, Garke B
2733 - 2734	Thermodynamic theory for preferred orientation in carbon and cubic BN McKenzie DR, Bilek MMM
2735 - 2737	Rapid thermal annealing of reactive sputtered tantalum oxide films on GaAs in N2O atmosphere Eftekhari G
2738 - 2741	High-performance x-ray detector for appearance potential spectroscopy Rangelov G, Ertl K, Passek F, Vonbank M, Bassen S, Reinmuth J, Donath M, Dose V
2742 - 2743	Silicon oxycarbide formation on SiC surfaces and the SiC/SiO2 interface (vol A15, pg 1597, 1997) Onneby C, Pantano CG