Low resistivity (approximate to 2.2-3.0 mu Omega cm), high purity copper films have been deposited by the hydrogen plasma assisted chemical vapor deposition of copper(II) hexafluoroacetylacetonate, Cu(Hfa)(2), at pressures of 1.0-3.0 Torr, substrate temperatures of 160-240 degrees C, plasma powers of 3.0-15.0 W and precursor mole fractions of 0.25%-0.8%. The film purity and morphology have been analyzed by X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffraction. Under the conditions investigated, the film growth rates were measured to be in the range of 40.0-200.0 Angstrom/min. The experiments suggest that the deposition rate, precursor conversion, him purity and morphology can be tailored by adjusting the operating conditions appropriately. Our results have been used in conjunction with a reactor model of plasma assisted chemical vapor deposition to suggest operating conditions for high copper growth rates and high purity.