A novel system for a material processing was developed using synchrotron radiation (SR) induced reaction. This system consisted of a SR, a radical source with a microwave plasma for an injection of radicals, and a CO2 laser for heating a substrate. Film formation was performed using this system. CH4 and CH3OH were used as a source gas and H radicals were injected by the radical source during film formation. The synthesized films were characterized by an atomic force microscope, a micro Auger electron spectroscopy, and a Fourier transform infrared absorption spectroscopy. CH3OH gas was found to be dissociated by an irradiation of SR. When CH3OH gas was employed without Il radical injection, a carbon film was formed only in the area of SR irradiation on Si substrate. Using SR irradiation employing CH3OH gas with H radical injection, nuclei of silicon carbide (SiC) were successfully formed in the area of SR irradiation on Si substrate at a temperature of 800 degrees C. The mechanism of SiC nucleation induced by SR irradiation is discussed.