Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.13, No.2 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (52 articles)

163 - 168	Thermal and Electron-Stimulated Chemistry of Fomblin-Zdol Lubricant on a Magnetic Disk Lin JL, Bhatia CS, Yates JT
169 - 177	Field Desorption of Lithium-Fluoride Stintz A, Panitz JA
178 - 182	Thermal-Reactions of Fluorocarbon and Hydrofluorocarbon Species on Si(100)-(2X1)-CF3I, Cf3Ch2I, and C2F4 Lin JL, Yates JT
183 - 187	Surface Free-Energies for Diamond Growth from Hydrogen-Hydrocarbon Mixtures Zhang YF, Chen GH
188 - 194	A Sensitive Method for Measuring Adsorbed Carbon on Palladium Surfaces - Titration by No Ramsier RD, Lee KW, Yates JT
195 - 199	Positive and Negative Direct-Current Bias Effects on the Microstructures and Physical-Properties of Hydrogenated Amorphous-Carbon Films Prepared by Radio-Frequency Plasma Chemical-Vapor-Deposition Nakayama M, Tsuyoshi A, Shibahara M, Maruyama K, Kamata K
200 - 206	Photoemission Spectroscopy Study of Thin Cr Overlayers on NH3/GaAs(100) Park KT, Cao JM, Gao Y, Ruckman MW
207 - 215	Structure and Morphology of Microprotrusions Grown on Ar+-Sputtered InP Kato J, Nozu M, Fujimoto Y, Tanemura M, Okuyama F
216 - 220	Local Order Measurement in Snge Alloys and Monolayer Sn Films on Si with Reflection Electron-Energy-Loss Spectrometry Wong SS, He G, Nikzad S, Ahn CC, Atwater HA
221 - 229	Adsorption of TiCl4 on TiSi2 - Application to Silicide Chemical-Vapor-Deposition Southwell RP, Seebauer EG
230 - 236	Low-Pressure Chemical-Vapor-Deposition of InSb Using Neopentylstibine and Trimethylindium Bu Y, Lin MC, Berry AD, Hendershot DG
237 - 243	Compositional and Electrical-Properties of Si Metal-Oxide-Semiconductor Structure Prepared by Direct Photoenhanced Chemical-Vapor-Deposition Using a Deuterium Lamp Shei SC, Su YK, Hwang CJ, Yokoyama M, Pan FM
244 - 247	Effect of the Predecomposition of Sif4 on the Properties of Silicon Dioxide Deposited at Low-Temperatures Using Sif4/SiH4/N2O in a Double-Plasma Process Alonso JC, Ortiz A, Falcony C, Garcia M
248 - 254	Beam and Decomposition Properties of Copper-Containing Metalorganic Precursors and Their Use for CuO Thin-Film Preparation in Chemical Beam Epitaxy Willmott PR, Felder P, Lingenauer M, Huber JR, Fritsch E, Bidell W, Berke H, Machler E, Williams EJ, Locquet JP, Bednorz JG
255 - 259	Crystal Orientation Control of YBa2Cu3Oy Thin-Films on MgO Prepared by Excimer-Laser Ablation with CO2-Laser Irradiation Inayoshi M, Hiramatsu M, Sugiura Y, Kawamura H, Nawata M
260 - 267	Deposition of Silicon-Oxide Onto Polyethylene and Polyethyleneterephthalate - An X-Ray Photoelectron-Spectroscopy Interfacial Study Rotger JC, Pireaux JJ, Caudano R, Thorne NA, Dunlop HM, Benmalek M
268 - 275	Effects of Water Partial-Pressure on the Activated Electron-Beam Evaporation Process to Deposit Tin-Doped Indium-Oxide Films Shigesato Y, Yasui I, Hayashi Y, Takaki S, Oyama T, Kamei M
276 - 281	Epitaxial-Growth of Body-Centered-Cubic Transition-Metal Films and Superlattices Onto MgO (111), (011), and (001) Substrates Mattson JE, Fullerton EE, Sowers CH, Bader SD
282 - 288	Influence of a Heteroepitaxial Interface with Large Lattice Mismatch on the Low-Temperature Growth of a Film Zeng H, Vidali G
289 - 294	Interface Structure of Ge/Si(111) During Solid-Phase Epitaxy Studied by Medium-Energy Ion-Scattering Sumitomo K, Nishioka T, Shimizu N, Shinoda Y, Ogino T
295 - 300	Growth, Structural Characterization, and Stability of Thin Cr/Delta-Mn(001) Superlattices Pohl J, Malang EU, Kohler J, Bucher E
301 - 304	Epitaxial-Growth of Ultrathin MgO Films on Fe(001) Seed Layers Park Y, Fullerton EE, Bader SD
305 - 313	Ion-Beam Epitaxy of Silicon Films in an Ultrahigh-Vacuum Using a Sputtering-Type Metal-Ion Source Matsuoka M, Tohno S
314 - 326	Thermal Relaxation Kinetics of Strained Si/Si1-xGex Heterostructures Determined by Direct Measurement of Mosaicity and Lattice-Parameter Variations Sardela MR, Hansson GV
327 - 331	Charge Separation in an Electron-Cyclotron-Resonance Plasma Inoue M, Nakamura S
332 - 334	Dose-Time Relation in BF3 Plasma Immersion Ion-Implantation Shao JQ, Round M, Qin S, Chan C
335 - 342	Dry-Etching of Titanium Nitride Thin-Films in CF4-O-2 Plasmas Fracassi F, Dagostino R, Lamendola R, Mangieri I
343 - 348	Permanent-Magnet Electron-Cyclotron-Resonance Plasma Source with Remote Window Berry LA, Gorbatkin SM
349 - 358	Study of the Phosphine Plasma Decomposition and Its Formation by Ablation of Red Phosphorus in Hydrogen Plasma Bruno G, Losurdo M, Capezzuto P
359 - 367	Plasma Diagnostics of a Direct-Current Arcjet Diamond Reactor .2. Optical-Emission Spectroscopy Reeve SW, Weimer WA
368 - 380	Global-Model of Ar, O-2, Cl-2, and Ar/O-2 High-Density Plasma Discharges Lee C, Lieberman MA
381 - 384	High-Quality ZnO Thin-Films on InP Substrates Prepared by Radio-Frequency Magnetron Sputtering .1. Material Study Chang SJ, Su YK, Shei YP
385 - 388	High-Quality ZnO Thin-Films on InP Substrates Prepared by Radio-Frequency Magnetron Sputtering .2. Surface-Acoustic-Wave Device Fabrication Chang SJ, Su YK, Shei YP
389 - 393	Optimized Magnetic-Field Shape for Low-Pressure Magnetron Sputtering Kadlec S, Musil J
394 - 399	Substrate Amorphization Induced by the Sputter-Deposition Process - Geometrical Aspects Valeri S, Altieri S, Didomenico T, Verucchi R
400 - 405	Determination of the Ion Velocity in a Radio-Frequency Ion-Beam by Laser-Induced Fluorescence Brockhaus A, Yuan Y, Engemann J
406 - 411	Adherent Carbon-Film Deposition by Cathodic Arc with Implantation Gerstner EG, Mckenzie DR, Puchert MK, Timbrell PY, Zou J
412 - 420	Mechanism of Surface Charging During CO2 Jet Spray Cleaning Hills MM
421 - 427	Enhancement of Thickness Uniformity of Thin-Films Grown by Pulsed-Laser Deposition Fernandez FE
428 - 435	Relative Importance of Bombardment Energy and Intensity in Ion Plating Fancey KS, Porter CA, Matthews A
436 - 441	Role of Residual Casting Solvent in Determining the Lithographic and Dissolution Behavior of Poly(Methylmethacrylate) Criss R, Cunningham AJ
442 - 447	Gas-Distribution Through Injection Manifolds in Vacuum-Systems Theil JA
448 - 450	Performance of an Ionization Gauge with a Large-Angle Ion Deflector .2. Mass Analysis of Residual-Gas and Electron-Stimulated Desorption Ions Satou T, Oshima C
451 - 461	Outgassing Rate of Preconditioned Vacuum-Systems After Short Exposure to the Atmosphere - Outgassing Rate Measurements on Viton-A and Copper Dayton BB
462 - 466	Flux Dependence of in-Situ Electron-Transport in Ag/Si(111) Kimberlin KR, Tringides MC
467 - 475	Modeling the Pump-Down of a Reversibly Adsorbed Phase .1. Monolayer and Submonolayer Initial Coverage Redhead PA
476 - 480	Plasma-Enhanced Chemical-Vapor-Deposition of SiO2 Using Novel Alkoxysilane Precursors Bogart KH, Dalleska NF, Bogart GR, Fisher ER
481 - 484	A New Method to Obtain Cu Films with Lower Resistivity and Higher Interface Adhesion on Different Substrates Yang J, Wang C, Tao K, Fan YD
485 - 487	Comments on the Stability of Bayard-Alpert Ionization Gauges Tilford CR, Filippelli AR, Abbott PJ
488 - 492	Auger-Electron Spectroscopy Characterization of Aluminum-Alloy Exposed to Synchrotron-Radiation Momose T, Asano K, Ohta N, Kanda Y, Ishimaru H
493 - 496	Sample Manipulator Employing a Gas-Thermal Switch Designed for High-Pressure Experiments in an Ultrahigh-Vacuum Apparatus Sneh O, George SM
497 - 500	Low Outgassing Residual-Gas Analyzer with a Beryllium-Copper-Alloy-Flanged Ion-Source Watanabe F, Kasai A