검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Reactive ion etching of Silicon Carbide with patterned Boron implantation Vassilevski K, Hedley J, Horsfall AB, Johnson CM, Wright NG Materials Science Forum, 457-460, 925, 2004 |
| 2 |
Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation Vassilevski K, Horsfall AB, Johnson CM, Wright NG Materials Science Forum, 457-460, 989, 2004 |
| 3 |
Benefits of high-k dielectrics in 4H-SIC trench MOSFETs Wright NG, Poolamai N, Vassilevski K, Horsfall AB, Johnson CM Materials Science Forum, 457-460, 1433, 2004 |
| 4 |
Enhanced dopant diffusion effects in 4H silicon carbide Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM Materials Science Forum, 389-3, 855, 2002 |
| 5 |
Photon emission analysis of defect-free 4H-SiC pn diodes in avalanche regime Banc C, Bano E, Ouisse T, Vassilevski K, Zekentes K Materials Science Forum, 389-3, 1293, 2002 |
| 6 |
Silicon carbide Zener diodes Vassilevski K, Zekentes K, Bogdanova EV, Lagadas M, Zorenko A Materials Science Forum, 353-356, 735, 2001 |
| 7 |
Fabrication and electrical characterization of 4H-SiC p(+)-n-n(+) diodes with low differential resistance Vassilevski K, Zekentes K, Constantinidis G, Strel'chuk A Solid-State Electronics, 44(7), 1173, 2000 |