Low capacitance (approximate to 1.7 pF at zero bias) 4H-SiC p(+)-n-n(+) diodes with moderately doped base region (similar to 10(17) cm(-3)) were fabricated. The diodes had a differential on-resistance less than 3.5 Ohm at current density j > 9 kA/cm(2). The corresponding value of the specific differential resistance R-D similar to 8.4 x 10(-5) Ohm cm(2) is the lowest published for 4H-SiC p(+)-n- n(+) diodes until now and is indicative of the ohmic contact quality. The contacts to p(+) 4H-SiC epitaxial layer were formed by post-deposition annealing of multi-layer Al/Ti/Pt/Ni metal scheme and the contact resistivity was estimated below 3.7 x 10(-5) Ohm cm(2). The voltage drop of 4.6 V was achieved at forward current 0.3 A corresponding to current density of j = 11 kA/cm(2). The diodes had a homogeneous avalanche breakdown at voltage U-b approximate to 280 V and were capable to dissipate a specific power approximate to 130 kW/cm(2) at d.c. avalanche current.