검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Mapping the interfacial reaction of alpha-Ga2O3 Schottky contacts through scanning internal photoemission microscopy Shiojima K, Kambara H, Matsuda T, Shinohe T Thin Solid Films, 685, 17, 2019 |
| 2 |
Epitaxial overgrowth of 4H-SiC for devices with p-buried floating junction structure Nishio J, Ota C, Shinohe T, Kojima K, Okumura H Materials Science Forum, 483, 147, 2005 |
| 3 |
Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping Hatakeyama T, Watanabe T, Senzaki J, Kato M, Fukuda K, Shinohe T, Arai K Materials Science Forum, 483, 829, 2005 |
| 4 |
Electrical Characteristics Temperature Dependence of 600V-class Deep Implanted Gate Vertical JFET Mizukami M, Takikawa O, Imai S, Kinoshita K, Hatakeyama T, Domon T, Shinohe T Materials Science Forum, 483, 881, 2005 |
| 5 |
Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD) Hatakeyama T, Nishio J, Shinohe T Materials Science Forum, 483, 921, 2005 |
| 6 |
Impact ionization coefficients of 4H-SiC Hatakeyama T, Watanabe T, Kojima K, Sano N, Shiraishi K, Kushibe M, Imai S, Shinohe T, Suzuki T, Tanaka T, Arai K Materials Science Forum, 457-460, 673, 2004 |
| 7 |
A 600V deep-implanted gate vertical JFET Mizukami M, Takikawa O, Murooka M, Imai S, Kinoshita K, Hatakeyama T, Tsukuda M, Saito W, Omura I, Shinohe T Materials Science Forum, 457-460, 1217, 2004 |
| 8 |
Nanoscale electrical characterization of 3C-SiC layers by conductive atomic force microscopy Yahata A, Zhang L, Shinohe T Materials Science Forum, 389-3, 667, 2002 |
| 9 |
Ion-implantation induced deep levels in SiC studied by isothermal capacitance transient spectroscopy (ICTS) Ono R, Fujimaki M, Senzaki J, Tanimoto S, Shinohe T, Okushi H, Arai K Materials Science Forum, 389-3, 847, 2002 |
| 10 |
Distribution profile of deep levels in SiC observed by isothermal capacitance transient spectroscopy Fujimaki M, Ono R, Kushibe M, Masahara K, Kojima K, Shinohe T, Okushi H, Arai K Materials Science Forum, 389-3, 851, 2002 |