Deep levels in ion implanted SiC were successfully characterized by ICTS. Four deep levels located at 0.375(E1), 0.64(E2a), 0.76(E2b) and 0.86(E3) eV below conduction band were found. E I and E2 were observed at depth region up to 0.9 mum, 3 times deeper than box shape profile depth, reveals that ion implantation induced defects have a very long tail damage region. While E3 considered as an origin defect was observable only at a deeper position.