The epitaxial overgrowth process was examined with a view to realizing the p-buried floating junction structure. The growth condition was investigated to reduce the p-type impurity contamination and to minimize the auto-doping. Total p-type impurity concentration was reduced to 1/50 of the n-type carrier concentration of the drift layers. The buried p-type floating structure was realized for the first time, using 4H-SiC material.