화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Quasi-vertical multi-tooth thin film transistors based on low-temperature technology (T <= 600 degrees C)
Zhang P, Jacques E, Rogel R, Coulon N, Bonnaud O
Solid-State Electronics, 79, 26, 2013
2 P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology
Zhang P, Jacques E, Rogel R, Bonnaud O
Solid-State Electronics, 86, 1, 2013
3 Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains
Germanicus RC, Picard E, Domenges B, Danilo K, Rogel R
Applied Surface Science, 253(14), 6006, 2007
4 Solid phase post-treatment of polysilicon films by a continuous argon laser
Michaud JF, Rogel R, Mohammed-Brahim T, Sarret M, Bonnaud O
Thin Solid Films, 487(1-2), 81, 2005
5 Fabrication of deep single trenches from N-type macroporous silicon
Gautier G, Ventura L, Pordie T, Rogel R, Jerisian R
Thin Solid Films, 487(1-2), 283, 2005
6 Influence of precursors gases on LPCVD TFT's characteristics
Rogel R, Gautier G, Coulon N, Sarret M, Bonnaud O
Thin Solid Films, 427(1-2), 108, 2003
7 Transport mechanisms in hydrogenated microcrystalline silicon
Brenot R, Vanderhaghen R, Drevillon B, Cabarrocas PRI, Rogel R, Mohammed-Brahim T
Thin Solid Films, 383(1-2), 53, 2001
8 High mobility thin film transistors by Nd : YVO4-laser crystallization
Helen Y, Dassow R, Nerding M, Mourgues K, Raoult F, Kohler JR, Mohammed-Brahim T, Rogel R, Bonnaud O, Werner JH, Strunk HP
Thin Solid Films, 383(1-2), 143, 2001
9 Single shot excimer laser crystallization and LPCVD silicon TFTs
Helen Y, Mourgues K, Raoult F, Mohammed-Brahim T, Bonnaud O, Rogel R, Prochasson S, Boher P, Zahorski D
Thin Solid Films, 337(1-2), 133, 1999