Transport properties of microcrystalline (muc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hail measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well as DTRMC shows that trapping in the disordered part of these films is not the main limiting parameter for transport in microcrystalline silicon. Besides, it is demonstrated that TRMC measurements are not sensitive to barriers between the crystallites. Our measurements reveal that, contrary to the case of p-Si, the influence of barriers in muc-Si/H can be neglected. Transport in muc-Si/H is consequently mainly limited by defects inside the crystallites.