In this work, we demonstrate that atomic force microscopy allows topography measurement as well as the local electrical proper-ties of very high-doped polysilicon film prior to any subsequent annealing. AFM and TEM observations showed the columnar microstructure of the polysilicon layer. The electrical effect of this microstructure was characterized using SCM, KFM and C-AFM. Each electric mode gives additional information on the local properties of the polysilicon layer. (c) 2007 Elsevier B.V. All rights reserved.