| 1 |
Sub-10 nm vertical tunneling transistors based on layered black phosphorene homojunction
Li H, Lu J
Applied Surface Science, 465, 895, 2019 |
| 2 |
Tunable charge and spin beams in RuS4 monolayer
Kanjouri F, Pishekloo SP, Khani H
Applied Surface Science, 487, 801, 2019 |
| 3 |
TFET inverter static and transient performances in presence of traps and localized strain
Gnani E, Visciarelli M, Gnudi A, Reggiani S, Baccarani G
Solid-State Electronics, 159, 38, 2019 |
| 4 |
Low temperature influence on performance and transport of Omega-gate p-type SiGe-on-insulator nanowire MOSFETs
Paz BC, Casse M, Barraud S, Reimbold G, Vinet M, Faynot O, Pavanello MA
Solid-State Electronics, 159, 83, 2019 |
| 5 |
Quenched Fano effect due to one Majorana zero mode coupled to the Fano interferometer
Wang Q, Zhu YL
Current Applied Physics, 18(11), 1275, 2018 |
| 6 |
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
Boudier D, Cretu B, Simoen E, Veloso A, Collaert N
Solid-State Electronics, 143, 27, 2018 |
| 7 |
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors - Physical interpretation of transport phenomena
Nafaa B, Cretu B, Ismail N, Touayar O, Carin R, Simoen E, Veloso A
Solid-State Electronics, 150, 1, 2018 |
| 8 |
Quantum half-adder Boolean logic gate with a nano-graphene molecule and graphene nano-electrodes
Srivastava S, Kino H, Joachim C
Chemical Physics Letters, 667, 301, 2017 |
| 9 |
Ensemble Control of Time-Invariant Linear Systems with Linear Parameter Variation
Li JS, Qi J
IEEE Transactions on Automatic Control, 61(10), 2808, 2016 |
| 10 |
III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond
Datta K, Khosru QDM
Solid-State Electronics, 118, 66, 2016 |
