검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Very low drift and high sensitivity of nanocrystal-TiO2 sensing membrane on pH-ISFET fabricated by CMOS compatible process Bunjongpru W, Sungthong A, Porntheeraphat S, Rayanasukha Y, Pankiew A, Jeamsaksiri W, Srisuwan A, Chaisriratanakul W, Chaowicharat E, Klunngien N, Hruanun C, Poyai A, Nukeaw J Applied Surface Science, 267, 206, 2013 |
| 2 |
The local generation and recombination lifetime based on forward diode characteristics diagnostics Pengchan W, Phetchakul T, Poyai A Journal of Crystal Growth, 362, 300, 2013 |
| 3 |
An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering Sungthong A, Porntheeraphat S, Poyai A, Nukeaw J Applied Surface Science, 254(23), 7950, 2008 |
| 4 |
Local electric fields in silicided shallow junctions Czerwinski A, Simoen E, Poyai A, Claeys C Journal of the Electrochemical Society, 151(9), G578, 2004 |
| 5 |
Diode analysis of advanced processing modules for deep-submicrometer CMOS technology nodes Poyai A, Simoen E, Claeys C, Rooyackers R Journal of the Electrochemical Society, 150(12), G795, 2003 |
| 6 |
Diode analysis of high-energy boron implantation-induced P-well defects Poyai A, Simoen E, Claeys C, Rooyackers R, Badenes G Journal of the Electrochemical Society, 148(9), G507, 2001 |
| 7 |
p-n junction diagnostics to determine surface and bulk generation/recombination properties of silicon substrates Claeys C, Poyai A, Simoen E, Czerwinski A, Katcki J Journal of the Electrochemical Society, 146(3), 1151, 1999 |
| 8 |
Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics Claeys C, Simoen E, Poyai A, Czerwinski A Journal of the Electrochemical Society, 146(9), 3429, 1999 |