The local electric field in a p-n junction crucially impacts the reverse (leakage) current that determines basic parameters of semiconductor devices and integrated circuits. The field importance and magnitude are investigated by a method based on the analysis of the leakage-current activation-energy (E-a) and its dependence on junction bias (V-R), especially on experimental occurrence of the dE(a)/dV(R) minimum. It is illustrated for silicided shallow junctions, which exhibit together with the generation current also a local Schottky effect due to small-area silicide penetrations. The method may also be used for different materials and current origins. (C) 2004 The Electrochemical Society.