화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Effect of substrate temperature on the properties of heavily Mn-doped GaAs
Lee HJ, Chiba D, Matsukura F, Ohno H
Journal of Crystal Growth, 301, 264, 2007
2 ToF-SIMS depth profiling of (Ga,Mn)As capped with amorphous arsenic: Effects of annealing time
Bexell U, Stanciu V, Warnicke P, Osth M, Svedlindh P
Applied Surface Science, 252(19), 7252, 2006
3 MBE growth and structural and magnetic properties of (In1-gamma Al gamma)(1-x)MnxAs-diluted magnetic semiconductors
Lee WN, Chen YF, Huang JH, Guo XJ, Kuo CT, Ku HC
Journal of Crystal Growth, 289(2), 502, 2006
4 Magnetotransport measurement of (Ga,Mn)As epilayers with low-temperature annealing
Kato H, Hamaya K, Kitamoto Y, Taniyama I, Munekata H
Electrochimica Acta, 51(5), 1004, 2005
5 Growth control, structure and ferrornagnetic properties of digital Mn/GaAs heterostructures
Guo XX, Herrmann C, Kong X, Kolovos-Vellianitis D, Daweritz L, Ploog KH
Journal of Crystal Growth, 278(1-4), 655, 2005
6 Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy
Ibanez J, Edmonds KW, Henini M, Eaves L, Pastor D, Cusco R, Artus L, Akinaga H
Journal of Crystal Growth, 278(1-4), 695, 2005
7 Self-assembled (In1-xMn,)As diluted magnetic semiconductor quantum dots with high T-c
Jeon HC, Chung KJ, Chung KJ, Kang TW, Kim TW, Yu YJ, Jhe W, Song SA
Current Applied Physics, 4(2-4), 213, 2004
8 Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(100) substrates
Uchitomi N, Sato S, Jinbo Y
Applied Surface Science, 216(1-4), 607, 2003
9 Surface morphologies of III-V based magnetic semiconductor (Ga,Mn) As grown by molecular beam epitaxy
Yang JR, Yasuda H, Wang SL, Matsukura F, Ohno Y, Ohno H
Applied Surface Science, 166(1-4), 242, 2000
10 Structural properties of MBE grown GaMnAs layers
Sadowski J, Domagala JZ, Bak-Misiuk J, Kolesnik S, Swiatek K, Kanski J, Ilver L
Thin Solid Films, 367(1-2), 165, 2000