We describe the growth of diluted magnetic semiconductor (DMS) (Ga1-x, Mn-x)As epitaxial layers on n-type Si(1 0 0) substrates using low-temperature-molecular beam epitaxy (LT-MBE). The Mn content of the (Ga1-x, Mn-x)As layers was relatively high (6.2%). The ferromagnetic transition temperature T-C was estimated to be 80 K for the as-grown film, and it strongly depended on the annealing temperature. The p-(Ga, Mn)As/n-Si heterostructures showing a ferromagnetic nature indicated a change in the sign of the Hall coefficient. We found that the transition temperature from n-type to p-type conduction considerably correlates with the T-C. (C) 2003 Elsevier Science B.V. All rights reserved.