We study the transport properties of molecular beam epitaxial Ga1-x-yMnxCryAs films with x = 3% and y = 0, 0.5 and 7%. We find that the hole concentration decreases with increasing Cr content, which can be attributed to increasing hole localisation in the Cr3+/Cr4+ impurity band. Our data indicate that carrier hopping or tunnelling are the main conduction mechanisms in the samples. We find no evidence of ferromagnetic ordering in the films co-doped with Mn and Cr. © 2005 Elsevier B.V. All rights reserved.