화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates
Kuznetsov NI, Mynbaeva MG, Melnychuk G, Dmitriev VA, Saddow SE
Applied Surface Science, 184(1-4), 483, 2001
2 Structural, electrical and optical properties of bulk 4H and 6H p-type SiC
Kalinina EV, Zubrilov AS, Kuznetsov NI, Nikitina IP, Tregubova AS, Shcheglov MP, Bratus VY
Materials Science Forum, 338-3, 497, 2000
3 4H-SiC CVD epitaxial layers with improved structural quality grown on SiC wafers with reduced micropipe density
Kalinina EV, Zubrilov A, Solov'ev V, Kuznetsov NI, Hallen A, Konstantinov A, Karlsson S, Rendakova S, Dmitriev V
Materials Science Forum, 338-3, 505, 2000
4 Electrical characteristics of 6H-SiC/GaN isotype n-n heterojunctions
Kuznetsov NI, Nikolaev AE, Melnik YV, Nikitina IP
Materials Science Forum, 338-3, 1655, 2000