Electrical characteristics of 6H-SiC/GaN isotype n-n heterojunctions were investigated. The forward current-voltage (IV)characteristics were measured in the temperature range 200-600 K. Conventional capacitance-voltage (CV) measurements were performed at different frequencies (1 MHz, 10 kHz and 1 kHz). According to Anderson's theory the discontinuities in conduction-band and valence-band edges were calculated to be 0.6 eV and 1.0 eV, respectively. The density of interface states was found to be 7x10(12) cm(-2).