Electrical characteristics of Schottky barriers fabricated on a 4H-SiC n-layer grown by chemical vapor deposition CVD) on both porous and conventional SiC substrates were investigated. Schottky barriers were formed by thermal vacuum evaporation of nickel. Current-voltage (1-V) and capacitance-voltage (C-V characteristics of the barrier were measured in the temperature range from 250 to 500 K and at different frequencies, respectively. Analysis of I-V characteristics showed that the forward current might be described by classic thermal emission theory. The ideality factor of the I-V characteristics was found to be independent of temperature and to be 1.05 +/- 0.02 which is close to the ideal value. The ideality factor for the control diodes was found to be 1.13 +/- 0.02. The barrier height was extracted from I-V characteristics to be 1.45 eV for both diodes. Analysis of the C-V characteristics indicates the existence of acceptor-like surface states in the CVD n-layer grown on porous substrate and donor-like states for the control material. The comparative study of the Schottky diodes fabricated on n-layer grown on porous and conventional substrate was performed.