화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers
Konstantinov A, Pham H, Lee B, Park KS, Kang B, Allerstam F, Neyer T
Solid-State Electronics, 148, 51, 2018
2 Comparative study of 4H-SiC irradiated with neutrons and heavy ions
Kalinina E, Kholuyanov G, Onushkin G, Davydov D, Strel'chuk A, Konstantinov A, Hallen A, Skuratov V, Kuznetsov A
Materials Science Forum, 483, 377, 2005
3 High energy resolution detectors based on 4H-SiC.
Ivanov A, Kalinina E, Kholuyanov G, Strokan N, Onushkin G, Konstantinov A, Hallen A, Kuznetsov A
Materials Science Forum, 483, 1029, 2005
4 Electrical study of fast neutron irradiated devices based on 4H-SiC CVD epitaxial layers
Kalinina E, Kholuyanov G, Strel'chuk A, Davydov D, Hallen A, Konstantinov A, Nikiforov A
Materials Science Forum, 457-460, 705, 2004
5 Boron diffusion in intrinsic, n-type and p-type 4H-SiC
Linnarsson MK, Janson MS, Shoner A, Konstantinov A, Svensson BG
Materials Science Forum, 457-460, 917, 2004
6 Highly uniform epitaxial SiC-layers grown in a hot-wall CVD reactor with mechanical rotation
Schoner A, Konstantinov A, Karlsson S, Berge R
Materials Science Forum, 389-3, 187, 2002
7 Ion implantation - Tool for fabrication of advanced 4H-SiC devices
Kalinina EV, Kholujanov G, Gol'dberg Y, Blank T, Onushkin G, Strel'chuk A, Violina G, Kossov V, Yafaev R, Hallen A, Konstantinov A
Materials Science Forum, 389-3, 835, 2002
8 Electrical and optical study of 4H-SiC CVD epitaxial layers irradiated with swift heavy ions
Kalinina E, Kholujanov G, Onushkin G, Davydov D, Strel'chuk A, Zubrilov A, Hallen A, Konstantinov A, Skuratov V, Stano J
Materials Science Forum, 433-4, 467, 2002
9 Gettering effect with Al implanted into 4H-SiC CVD epitaxial layers
Kalinina E, Kholujanov G, Sitnikova A, Kossov V, Yafaev R, Pensl G, Reshanov S, Hallen A, Konstantinov A
Materials Science Forum, 433-4, 637, 2002
10 Design and technology considerations for a RF BJT in SiC
Bakowski M, Ericsson P, Harris C, Konstantinov A, Savage S, Schoner A
Materials Science Forum, 433-4, 797, 2002