The technology evaluation study has been performed using numerical simulation in order to determine the expected prestanda of a SiC bipolar transistor used as a RF power element. The same technology could be used to fabricate a BJT for motor drive applications. The two main parameters selected for evaluation were the cut-off frequency, f(T), and the common emitter current gain, h(FE). According to simulations it should be possible to realise the 700 V BJT device with a cut-off frequency of 10 GHz and a current gain of more than 100 using the proposed technology.