Radiation defects and electrical properties in 4H-SiC epitaxial layer bombarded with 245 MeV Kr ions were studied using deep level transient spectroscopy (DLTS), photoluminescence and electrical measurements. Capacitance -, current - and charge - DLTS spectra have shown the presence mainly of Z1 (0.66 eV) deep level similar to those obtained for electrons, neutrons and light ions. The temperature dependence of electrical resistivity of 4H-SiC structures with Schottky barriers was characterized by two stages that was connected with compound mechanism of the defects formation in SiC during heavy ions irradiation.